MAC9D, MAC9M, MAC9N

http://onsemi.com

2

THERMAL CHARACTERISTICS

Characteristic

Symbol

Value

Unit

Thermal Resistance — Junction to Case

— Junction to Ambient

R

θJC

R

θJA

2.2

62.5

°C/W

Maximum Lead Temperature for Soldering Purposes 1/8

″ from Case for 10 Seconds

TL

260

°C

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Peak Repetitive Blocking Current

(VD = Rated VDRM, VRRM; Gate Open)

TJ = 25°C

TJ = 125°C

IDRM,

IRRM

—

—

—

—

0.01

2.0

mA

ON CHARACTERISTICS

Peak On-State Voltage*

(ITM = ± 11 A Peak)

VTM

—

1.2

1.6

Volts

Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 Ω)

MT2(+), G(+)

MT2(+), G(–)

MT2(–), G(–)

IGT

10

10

10

16

18

22

50

50

50

mA

Holding Current

(VD = 12 V, Gate Open, Initiating Current = ±150 mA)

IH

—

30

50

mA

Latching Current (VD = 24 V, IG = 50 mA)

MT2(+), G(+); MT2(–), G(–)

MT2(+), G(–)

IL

—

—

20

30

50

80

mA

Gate Trigger Voltage (VD = 12 V, RL = 100 Ω)

MT2(+), G(+)

MT2(+), G(–)

MT2(–), G(–)

VGT

0.5

0.5

0.5

0.69

0.77

0.72

1.5

1.5

1.5

Volts

Gate Non–Trigger Voltage (VD = 12 V, RL = 100 Ω, TJ = 125°C)

MT2(+), G(+); MT2(+), G(–); MT2(–), G(–)

VGD

0.2

—

—

Volts

DYNAMIC CHARACTERISTICS

Rate of Change of Commutating Current; See Figure 10.

(VD = 400 V, ITM = 4.4 A, Commutating dv/dt = 18 V/µs,

Gate Open, TJ = 125°C, f = 250 Hz, No Snubber)

CL = 10 µF

LL = 40 mH

(di/dt)c

6.5

—

—

A/ms

Critical Rate of Rise of Off-State Voltage

(VD = Rated VDRM, Exponential Waveform,

Gate Open, TJ = 125°C)

dv/dt

500

—

—

V/

µs

*Indicates Pulse Test: Pulse Width

≤ 2.0 ms, Duty Cycle ≤ 2%.