APT65GP60L2DF2 datasheet(1/9 Pages) ADPOW

номер детали	APT65GP60L2DF2

подробное описание детали	POWER MOS 7 IGBT

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производитель	ADPOW [Advanced Power Technology]

домашняя страница	http://www.advpowertech.com

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APT65GP60L2DF2

TYPICAL PERFORMANCE CURVES

The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs.

Using Punch Through Technology this IGBT is ideal for many high frequency,

high voltage switching applications and has been optimized for high frequency

switchmode power supplies.

• Low Conduction Loss

• 100 kHz operation @ 400V, 54A

• Low Gate Charge

• 50 kHz operation @ 400V, 76A

• Ultrafast Tail Current shutoff

• SSOA rated

MAXIMUM RATINGS

All Ratings: TC = 25°C unless otherwise specified.

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

STATIC ELECTRICAL CHARACTERISTICS

MIN

TYP

MAX

600

3

4.5

6

2.2

2.7

2.1

1250

5500

±100

Characteristic / Test Conditions

Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 1250µA)

Gate Threshold Voltage (VCE = VGE, IC = 2.5mA, Tj = 25°C)

Collector-Emitter On Voltage (VGE = 15V, IC = 65A, Tj = 25°C)

Collector-Emitter On Voltage (VGE = 15V, IC = 65A, Tj = 125°C)

Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) 2

Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) 2

Gate-Emitter Leakage Current (VGE = ±20V)

Symbol

BVCES

VGE(TH)

VCE(ON)

ICES

IGES

UNIT

Volts

µA

nA

Symbol

VCES

VGE

VGEM

IC1

IC2

ICM

SSOA

PD

TJ,TSTG

TL

APT65GP60L2DF2

600

±20

±30

100

96

250

250A@600V

833

-55 to 150

300

UNIT

Volts

Amps

Watts

°C

Parameter

Collector-Emitter Voltage

Gate-Emitter Voltage

Gate-Emitter Voltage Transient

Continuous Collector Current 7 @ TC = 25°C

Continuous Collector Current @ TC = 110°C

Pulsed Collector Current 1

@ TC = 150°C

Safe Switching Operating Area @ TJ = 150°C

Total Power Dissipation

Operating and Storage Junction Temperature Range

Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.

POWER MOS 7® IGBT

G

C

E

G

C

E

TO-264

Max

APT65GP60L2DF2

600V

Аналогичный номер детали - APT65GP60L2DF2

производитель	номер детали	датащи	подробное описание детали
Advanced Power Technolo...	APT65GP60L2DQ2	442Kb / 9P	POWER MOS 7 IGBT
Advanced Power Technolo...	APT65GP60L2DQ2G	442Kb / 9P	POWER MOS 7 IGBT

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Аналогичное описание - APT65GP60L2DF2

производитель	номер детали	датащи	подробное описание детали
Advanced Power Technolo...	APT80GP60B2	94Kb / 6P	POWER MOS 7 IGBT
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	APT26GU30B	166Kb / 6P	POWER MOS 7 IGBT
	APT26GU30K	172Kb / 6P	POWER MOS 7 IGBT
	APT30GP60BDQ1	438Kb / 9P	POWER MOS 7 IGBT
	APT32GU30K	196Kb / 6P	POWER MOS 7 IGBT
	APT50GP60J	98Kb / 6P	POWER MOS 7 IGBT
	APT40GP60B2DF2	205Kb / 9P	POWER MOS 7 IGBT
	APT25GP90BDF1	209Kb / 9P	POWER MOS 7 IGBT

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Аналогичный номер детали - APT65GP60L2DF2

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