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ADC081000LEVAL датащи(PDF) 6 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
номер детали ADC081000LEVAL
подробное описание детали  High Performance, Low Power 8-Bit, 1 GSPS A/D Converter
PDF  29 Pages
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производитель  NSC [National Semiconductor (TI)]
домашняя страница  http://www.national.com
Logo NSC - National Semiconductor (TI)

ADC081000LEVAL датащи(HTML) 6 Page - National Semiconductor (TI)

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Absolute Maximum Ratings
(Notes 1, 2)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Supply Voltage (V
A,VDR)
2.2V
Voltage on Any Input Pin
−0.15V to
(V
A +0.15V)
Ground Difference
|GND - DR GND|
0V to 100 mV
Input Current at Any Pin (Note 3)
±25 mA
Package Input Current (Note 3)
±50 mA
Power Dissipation at T
A = 25˚C
2.0 W
ESD Susceptibility (Note 4)
Human Body Model
Machine Model
2500V
250V
Soldering Temperature, Infrared,
10 seconds (Note 5)
235˚C
Storage Temperature
−65˚C to +150˚C
Operating Ratings (Notes 1, 2)
Ambient Temperature Range
−40˚C
≤ T
A
≤ +85˚C
Supply Voltage (V
A)
+1.8V to +2.0V
Driver Supply Voltage (V
DR)
+1.8V to V
A
Analog Input Common Mode
Voltage
1.2V to 1.3V
V
IN Differential Voltage Range
−V
FS/2 to +VFS/2
Ground Difference
(|GND - DR GND|)
0V
CLK Pins Voltage Range
0V to V
A
Differential CLK Amplitude
0.6V
P-P to 2.0VP-P
Package Thermal Resistances
Package
θ
J-C
(Top of
Package)
θ
J-PAD
(Thermal
Pad)
128-Lead Exposed Pad
LQFP
10˚C / W
2.8˚C / W
Converter Electrical Characteristics
The following specifications apply after calibration for V
A =VDR = +1.9VDC, OutV = 1.9V, VIN FSR (a.c. coupled) = differential
800mV
P-P,CL = 10 pF, Differential, a.c. coupled Sinewave Clock, fCLK = 1 GHz at 0.5VP-P with 50% duty cycle, REXT = 3300
Ω
± 0.1%, Analog Signal Source Impedance = 100
Ω. Boldface limits apply for T
A =TMIN to TMAX. All other limits TA = 25˚C,
unless otherwise stated. (Notes 6, 7)
Symbol
Parameter
Conditions
Typical
(Note 8)
Limits
(Note 8)
Units
(Limits)
STATIC CONVERTER CHARACTERISTICS
INL
Integral Non-Linearity
±0.35
±0.9
LSB (max)
DNL
Differential Non-Linearity
±0.25
±0.7
LSB (max)
Resolution with No Missing Codes
8
Bits
V
OFF
Offset Error
−0.45
−1.5
0.5
LSB (min)
LSB (max)
TC V
OFF
Offset Error Tempco
−40˚C to +85˚C
−3
ppm/˚C
PFSE
Positive Full-Scale Error (Note 9)
−2.2
±25
mV (max)
NFSE
Negative Full-Scale Error (Note 9)
−1.1
±25
mV (max)
TC PFSE
Positive Full Scale Error Tempco
−40˚C to +85˚C
20
ppm/˚C
TC NFSE
Negative Full Scale Error Tempco
−40˚C to +85˚C
13
ppm/˚C
Dynamic Converter Characteristics
FPBW
Full Power Bandwidth
1.7
GHz
Gain Flatness
d.c. to 500 MHz
±0.5
dBFS
d.c. to 1 GHz
±1.0
dBFS
ENOB
Effective Number of Bits
f
IN = 100 MHz, VIN = FSR − 0.5 dB
7.5
Bits
f
IN = 248 MHz, VIN = FSR − 0.5 dB
7.5
7.1
Bits (min)
f
IN = 498 MHz, VIN = FSR − 0.5 dB
7.5
7.1
Bits (min)
SINAD
Signal-to-Noise Plus Distortion
Ratio
f
IN = 100 MHz, VIN = FSR − 0.5 dB
47
dB
f
IN = 248 MHz, VIN = FSR − 0.5 dB
47
44.8
dB (min)
f
IN = 498 MHz, VIN = FSR − 0.5 dB
47
44.8
dB (min)
SNR
Signal-to-Noise Ratio
f
IN = 100 MHz, VIN = FSR − 0.5 dB
48
dB
f
IN = 248 MHz, VIN = FSR − 0.5 dB
48
45.5
dB (min)
f
IN = 498 MHz, VIN = FSR − 0.5 dB
48
45.5
dB (min)
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