2 - 4

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Symbol

Test Conditions

Characteristic Values

(T

min.

typ.

max.

g

fs

V

DS

= 20 V; I

1.5

2.5

S

C

iss

1050

pF

C

oss

V

GS

= 0 V, V

120

pF

C

rss

30

pF

t

d(on)

17

ns

t

r

V

GS

= 10 V, V

15

ns

t

d(off)

R

32

ns

t

f

18

ns

Q

g(on)

39

nC

Q

gs

V

GS

= 10 V, V

9nC

Q

gd

22

nC

R

thJC

0.8

K/W

R

thCK

(TO-220)

0.25

K/W

Source-Drain Diode

Characteristic Values

(T

Symbol

Test Conditions

min.

typ.

max.

I

S

V

4

A

I

SM

Repetitive; pulse width limited by T

JM

16

A

V

SD

I

V

1.5

V

Pulse test, t

£ 300 ms, duty cycle d £ 2 %

t

rr

250

ns

Q

RM

I

0.52

mC

I

RM

1.8

A

TO-263 AA (IXFA) Outline

Dim.

Millimeter

Inches

Min.

Max.

Min.

Max.

A

4.06

4.83

.160

.190

A1

2.03

2.79

.080

.110

b

0.51

0.99

.020

.039

b2

1.14

1.40

.045

.055

c

0.46

0.74

.018

.029

c2

1.14

1.40

.045

.055

D

8.64

9.65

.340

.380

D1

7.11

8.13

.280

.320

E

9.65

10.29

.380

.405

E1

6.86

8.13

.270

.320

e

2.54

BSC

.100

BSC

L

14.61

15.88

.575

.625

L1

2.29

2.79

.090

.110

L2

1.02

1.40

.040

.055

L3

1.27

1.78

.050

.070

L4

0

0.38

0

.015

R

0.46

0.74

.018

.029

TO-220 AB (IXFP) Outline

Dim.

Millimeter

Inches

Min.

Max.

Min.

Max.

A

12.70

13.97

0.500

0.550

B

14.73

16.00

0.580

0.630

C

9.91

10.66

0.390

0.420

D

3.54

4.08

0.139

0.161

E

5.85

6.85

0.230

0.270

F

2.54

3.18

0.100

0.125

G

1.15

1.65

0.045

0.065

H

2.79

5.84

0.110

0.230

J

0.64

1.01

0.025

0.040

K

2.54

BSC

0.100

BSC

M

4.32

4.82

0.170

0.190

N

1.14

1.39

0.045

0.055

Q

0.35

0.56

0.014

0.022

R

2.29

2.79

0.090

0.110

IXFA 4N100Q

IXFP 4N100Q

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,486,715

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,381,025