TC1266 datasheet(3/16 Pages) MICROCHIP

номер детали	TC1266

подробное описание детали	200mA PCI LDO

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производитель	MICROCHIP [Microchip Technology]

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DS21377B-page 3

TC1266

TC1266 ELECTRICAL SPECIFICATIONS

(CONTINUED)

Electrical Characteristics: TA = +25°C, VIN =5V, VAUX =3.3V, IOUT =0.1mA,COUT =4.7µF, unless otherwise noted. Boldface

type specifications apply over full operating temperature range.

Symbol

Parameter

Min

Typ

Max

Units

Test Conditions

VDR

Drive Voltage

VIN -0.2

VIN -0.3

VIN -0.1

—

V4.3V

≤ V

IN ≤ 5.5V, IDR =200µA

—

150

200

VIN <VTH(LO),IDR =200µA

IDR(PK)

Peak Drive Current

—

Sinking: VIN =3.75V, VDR =1V;

Sourcing: VIN =4.3V, VIN –VDR =2V

tDH

Drive High Delay

(Notes 1, 5)

—

µsec

CDR =1.2nF,VIN ramping up,

measured from VIN =VTH(HI) to VDR =2V

tDL

Drive Low Delay

(Notes 1, 5)

—

0.6

—

1.5

3.0

µsec

CDR =1.2nF,VIN ramping down,

measured from VIN =VTH(LO) to VDR =2V

Note

Ensured by design.

See 5V Detect Thresholds, Figure 4-1.

Recommended source impedance for 5V supply:

≤ 0.25Ω. This will ensure that I

OUT xRSOURCE <VHYST, thus avoiding DR toggling during

5V detect threshold transitions.

In Application Circuit, Figure 3-1.

See Timing Diagram, Figure 4-2.

Ground Current is independent of ILOAD.

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