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STGF10NC60KD датащи(PDF) 3 Page - STMicroelectronics

номер детали STGF10NC60KD
подробное описание детали  10 A, 600 V short-circuit rugged IGBT
PDF  30 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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STGF10NC60KD датащи(HTML) 3 Page - STMicroelectronics

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STGB10NC60KDT4, STGD10NC60KDT4,
STGF10NC60KD, STGP10NC60KD
Electrical ratings
DocID11423 Rev 7
3/30
1
Electrical ratings
Table 2: Absolute maximum ratings
Symbo
l
Parameter
Value
Unit
D²PAK,
TO-220
DPAK
TO-220FP
VCES
Collector-emitter voltage (VGE = 0 V)
600
V
IC(1)
Continuous collector current at TC = 25 °C
20
9
A
Continuous collector current at TC = 100 °C
10
6
A
ICL(2)
Turn-off latching current
30
A
ICP(3)
Pulsed collector current
30
A
VGE
Gate-emitter voltage
±20
V
IF
Diode RMS forward current at Tc=25°C
10
A
IFSM
Surge non repetitive forward current tp = 10
ms sinusoidal
20
A
PTOT
Total dissipation at TC = 25 °C
65
62
25
W
VISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1 s;TC=25 °C)
2500
V
tscw
Short-circuit withstand time VCE = 0.5 VCES,
Tj = 125 °C, RG
= 10 Ω, VGE = 12 V
10
μs
Tstg
Storage temperature range
- 55 to 150
°C
TJ
Operating junction temperature range
Notes:
(1)Calculated according to the iterative formula:
(2)Vclamp = 80 % VCES, VGE = 15 V, RG = 10 Ω, TJ = 150 °C.
(3)Pulse width limited by maximum junction temperature and turn-off within RBSOA.
Table 3: Thermal data
Symbol
Parameter
Value
Unit
TO-220, D²PAK
DPAK
TO-220FP
Rthj-case
Thermal resistance junction-case IGBT
1.9
2
5
°C/W
Rthj-case
Thermal resistance junction-case diode
4
4.5
7
Rthj-amb
Thermal resistance junction-ambient
62.5
100
62.5



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