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2SC5800 датащи(PDF) 2 Page - Renesas Technology Corp

номер детали 2SC5800
подробное описание детали  NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE
PDF  24 Pages
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производитель  RENESAS [Renesas Technology Corp]
домашняя страница  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SC5800 датащи(HTML) 2 Page - Renesas Technology Corp

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Data Sheet P15660EJ1V0DS
2
2SC5800
ELECTRICAL CHARACTERISTICS (TA = +25
°°°°C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
DC Characteristics
Collector Cut-off Current
ICBO
VCB = 5 V, IE = 0 mA
–
–
600
nA
Emitter Cut-off Current
IEBO
VBE = 1 V, IC = 0 mA
–
–
600
nA
DC Current Gain
hFE
Note 1
VCE = 1 V, IC = 5 mA
100
120
145
–
RF Characteristics
Gain Bandwidth Product (1)
fT
VCE = 1 V, IC = 5 mA, f = 2 GHz
3.0
4.5
–
GHz
Gain Bandwidth Product (2)
fT
VCE = 1 V, IC = 15 mA, f = 2 GHz
5.0
6.5
–
GHz
Insertion Power Gain (1)
S21e2 VCE = 1 V, IC = 5 mA, f = 2 GHz
3.0
4.0
–
dB
Insertion Power Gain (2)
S21e2 VCE = 1 V, IC = 15 mA, f = 2 GHz
4.5
5.5
–
dB
Noise Figure
NF
VCE = 1 V, IC = 10 mA, f = 2 GHz,
ZS = Zopt
–1.9
2.5
dB
Reverse Transfer Capacitance
Cre
Note 2
VCB = 0.5 V, IE = 0 mA, f = 1 MHz
–
0.6
0.8
pF
Notes 1. Pulse measurement: PW
≤ 350
µs, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
hFE CLASSIFICATION
Rank
FB
Marking
80
hFE Value
100 to 145



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