| поискавой системы для электроныых деталей |
|
LM3495 датащи(PDF) 21 Page - National Semiconductor (TI) |
|
|
|
|||||||||||||||||||||||||||||
LM3495 датащи(HTML) 21 Page - National Semiconductor (TI) |
|
21 / 26 page ![]() Design Considerations (Continued) The bandwidth of this example circuit is 49 kHz, with a phase margin of 46˚. Efficiency Calculations A reasonable estimation for the efficiency, η, of a buck regulator controlled by the LM3495 can be obtained by adding together the loss in each current carrying element, P TOTAL-LOSS, and using the equation: The following shows an efficiency calculation to complement the Typical Application circuit. Output power for this circuit is P O = 1.2V x 10A = 12W. Input voltage is assumed to be 12V, and the calculations used assume that the converter runs in CCM. Chip Operating Loss This term accounts for the current drawn at the VIN pin. This current, I IN, drives the logic circuitry and the power FETs. The gate driving loss term from the power FET section of Design Considerations is included in the chip operating loss. For the LM3495, I IN is equal to the steady state operating current, I Q, plus the FET driving current, IGC. Power is lost as this I IN passes through the internal linear regulator of the LM3495. I GC =(QG-HI +QG-LO)xfOSC I GC = (11nC + 33nC) x 500 kHz = 22 mA I Q is typically 1.8 mA, taken from the Electrical Characteris- tics table. Chip Operating Loss is then: P Q =VIN x(IQ +IGC) P Q = 12V x (1.8mA + 22mA) = 0.29W High-Side FET Switching Loss P SW =0.5xVIN xIO x(tR +tF)xfSW P SW = 0.5 x 12V x 10A x (5 ns + 8 ns) x 500 kHz = 0.39W FET Conduction Loss P C =D(I 2 O xRDSON-HI x 1.3) P C-HI = 0.1 x (100 x 0.013) = 0.13W P C =(1-D)(I 2 O xRDSON-LO x 1.3) P C-LO = 0.9 x (100 x 0.0044) = 0.40W R SNS Loss (if used) P SNS =(1-D)((IO) 2 xR SNS) Not used in this example. Input Capacitor Loss This term represents the loss as input ripple current passes through the ESR of the input capacitor bank. In this equation ‘n’ is the number of capacitors in parallel. P IN = (3A) 2 x2m Ω) = 0.018W Output Inductor Loss P LOUT =(IO) 2 xR L P LOUT = (10A) 2 x3m Ω = 0.3W Total Loss P LOSS = 1.53W Efficiency n = 12W/(12W +1.50W) = 88% Layout Considerations To produce an optimal power solution with the LM3495, good layout and design of the PCB are as important as the com- ponent selection. The following are several guidelines to aid in creating a good layout. KELVIN TRACES FOR SENSE LINES The pins of the low-side FET should be connected as close as possible to the SW/CSH and CSL pins. Each pin should use a separate trace, and the traces should be run parallel to each other to give common mode rejection. Although it can be difficult in a compact design, these traces should stay away from the output inductor if possible, to avoid coupling stray flux. The SNS pin should also be connected using a separate Kelvin trace, running from the positive pin/pad of the output 20169968 20169969 FIGURE 10. Overall Loop Gain and Phase www.national.com 21 |
|
|
ссылки URL |
| Вашему бизинису помогли Аллдатащит? [ DONATE ] |
Что такое Аллдатащит | реклама | контакт | Конфиденциальность | Ссылка на техническое описание | обмен ссыками | поиск по производителю All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |