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TP5700AM датащи(PDF) 7 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
номер детали TP5700AM
подробное описание детали  Telephone Speech Circuit
PDF  8 Pages
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производитель  NSC [National Semiconductor (TI)]
домашняя страница  http://www.national.com
Logo NSC - National Semiconductor (TI)

TP5700AM датащи(HTML) 7 Page - National Semiconductor (TI)

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Applications Information (Continued)
be added to reduce the level at the speech circuit DTMF
Input For application requiring higher DTMF level the signal
swing across the device can be raised by using 620X in
series with 270X for RO The 270X has to be bypassed by a
10 mf capacitor in order to maintain same AC off hook im-
pedance
PULSE DIALING TELEPHONE
The TP5700A can reduce the number of components re-
quired to build a pulse dialing telephone as shown in
Figure
5 The usual current source can be eliminated by using the
VREG1 output to power a low-voltage (17V) series mode
pulse dialer via a blocking diode A low forward-voltage drop
diode such as a Schottky type is necessary because
VREG1 is used in its non-regulated mode and its output volt-
age may fall to 2V on a 20 mA loop A 100 mF decoupling
capacitor is required to hold up the pulse dialer supply volt-
age during dialing This capacitor will take about one second
to charge up when the telephone is first connected to the
line but thereafter the 20 MX resistor required to retain the
last-number dialed memory will keep this capacitor charged
Partial muting is obtained by directly connecting the N-chan-
nel open-drain MUTE output of the pulse dialer to the RCV
IN pin on the Speech Circuit
A fully muted pulse dialer design requires the use of a shunt-
mode dialer
TLH5201 – 9
Low voltage drop diode (eg Schottky)
Low leakage type
Indicates National Semiconductor discrete transistor process number
FIGURE 5 Typical Pulse Dialing Telephone
7



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