1

Characteristics

Table 2. Absolute maximum ratings (limiting values, Tj = 25 °C unless otherwise stated)

Symbol

Parameters

Value

Unit

IT(RMS)

RMS on-state current (full sine wave)

SO-8

TLEAD = 90 °C

1

A

ITSM

Non repetitive surge peak on-state current

(full cycle, Tj initial = 25 °C)

f = 50 Hz

tp = 20 ms

8

A

f = 60 Hz

tp = 16.7 ms

8.5

I2t

I2t value for fusing

tp = 10 ms

0.35

A2s

VDRM/VRRM

Repetitive peak off-state voltage

Tj = 125 °C

600

V

VDSM/VRSM

Non Repetitive peak off-state voltage

tp = 10 ms

Tj = 25 °C

700

V

dI/dt

Critical rate of rise of on-state current

IG = 2 x IGT , tr ≤ 100 ns

f = 120 Hz

Tj = 25 °C

50

A/µs

IGM

Peak gate current

tp = 20 µs

Tj = 125 °C

1

A

PG(AV)

Average gate power dissipation

Tj = 125 °C

0.1

W

Tstg

Storage junction temperature range

-40 to +150

°C

Tj

Operating junction temperature range

-40 to +125

°C

Table 3. Electrical characteristics (Tj = 25 °C, unless otherwise specified)

Symbol

Parameters

Quadrant

Value

Unit

IGT(1)

VD = 12 V, RL = 30 Ω

I - II - III - IV

Max.

10

mA

VGT

Max.

1.3

V

VGD

VD = VDRM, RL = 3.3 kΩ, Tj = 125 °C

All

Min.

0.2

V

IH(2)

IT = 50 mA

Max.

10

mA

IL

IG = 1.2 IGT

I - III - IV

Max.

15

mA

II

Max.

25

dV/dt(2)

VD = 67 % VDRM gate open, Tj = 110 °C

Min.

50

V/µs

(dV/dt)c(2)

(dI/dt)c = 0.44 A/ms, Tj = 110 °C

Min.

2

V/µs

1. Minimum IGT is guaranteed at 5 % of IGT max.

2. For both polarities of A2 referenced to A1

Table 4. Static electrical characteristics

Symbol

Test conditions

Tj

Value

Unit

VT(1)

ITM = 1.4 A, tp = 380 µs

25 °C

Max.

1.60

V

VTO(1)

Threshold on-state voltage

125 °C

Max.

0.95

V

Rd(1)

Dynamic resistance

125 °C

Max.

0.43

Ω

IDRM

IRRM

VD = VR = VDRM = VRRM

25 °C

Max.

5

µA

125 °C

0.5

mA

1. For both polarities of A2 referenced to A1

Z0109M1

Characteristics

DS13130 - Rev 1

page 2/13