BUL741FP datasheet(4/12 Pages) STMICROELECTRONICS

номер детали	BUL741FP

подробное описание детали	High voltage fast-switching NPN power transistors

PDF	12 Pages

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производитель	STMICROELECTRONICS [STMicroelectronics]

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Electrical characteristics

BUL741, BUL741FP

4/12

Doc ID 13406 Rev 3

Electrical characteristics

Tcase = 25 °C unless otherwise specified.

2.1

Typical characteristic

Table 4.

Electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ICES

Collector cut-off current

(VBE = 0)

VCE = 1050 V

0.2

µA

ICEO

Collector cut-off current

(IB = 0)

VCE = 400 V

250

µA

V(BR)EBO

Emitter-base breakdown

voltage (IC = 0)

IE = 1 mA

VCEO(sus)

(1)

Pulse test: pulse duration

≤300 µs, duty cycle ≤2 %

Collector-emitter

sustaining voltage (IB = 0)

IC = 10 mA

400

450

VCE(sat)

(1)

Collector-emitter

saturation voltage

IC = 0.7 A IB = 0.14 A

IC = 2 A

IB = 0.6 A

0.15

0.5

1.5

VBE(sat)

(1)

Base-emitter saturation

voltage

IC = 2 A

IB = 0.6 A

1.1

1.5

hFE

DC current gain

IC = 0.1 A

VCE = 5 V

IC = 0.45 A

VCE = 3 V

100

Resistive load

Storage time

Fall time

VCC = 125 V

IC = 1 A

IB(on) = -IB(off) = 0.2 A

tp = 300 µs VBB(off) = - 5 V

2.5

350

3.5

500

µs

Ear

Repetitive avalanche

energy

L = 2 mH

C = 1.8 nF

VBB(off) = - 5V

5mJ

Figure 2.

Safe operating area

Figure 3.

Derating curve

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