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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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FDB6030BL датащи(PDF) 1 Page - Inchange Semiconductor Company Limited |
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FDB6030BL датащи(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  isc website：www.iscsemi.cn isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor FDB6030BL FEATURES · Drain Current : ID=40A@ TC=25℃ · Drain Source Voltage : VDSS= 30V(Min) · Static Drain-Source On-Resistance : RDS(on) =18mΩ(Max) @ VGS= 10V · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION · motor drive, DC-DC converter, power switch and solenoid drive. · ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ± 20 V ID Drain Current-Continuous;@Tc=25℃ 40 A IDM Drain Current-Single Pulsed 160 A PD Total Dissipation 60 W Tj Operating Junction Temperature -65~175 ℃ Tstg Storage Temperature -65~175 ℃ · THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-case thermal resistance 2.5 ℃ /W |
Аналогичный номер детали - FDB6030BL |
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Аналогичное описание - FDB6030BL |
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