D44VH10 datasheet(1/3 Pages) ISC

номер детали	D44VH10

подробное описание детали	isc Silicon NPN Power Transistors

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2022-12-09

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isc Silicon NPN Power Transistors

D44VH10

DESCRIPTION

·

Low Collector-Emitter Saturation Voltage

: VCE(sat)= 0.4V(Max)@ IC = 8A

·

Fast Switching Speeds

·

Complement to Type D45VH10

·

Minimum Lot-to-Lot variations for robust device performance

and reliable operation

APPLICATIONS

·

Designed for general purpose power amplification and

switching such as output or driver stages in applications

such as switching regulators,converters and power amplifier.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCEO

Collector-Emitter Voltage

80

V

VCBO

Collector-Base Voltage

100

V

VEBO

Emitter-Base Voltage

7.0

V

IC

Collector Current-Continuous

15

A

PC

Collector Power Dissipation

@TC=25℃

83

W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance, Junction to Case

1.5

℃

/W

Аналогичный номер детали - D44VH10

производитель	номер детали	датащи	подробное описание детали
ON Semiconductor	D44VH10	90Kb / 5P	Complementary Silicon Power Transistors November, 2007 - Rev. 5
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ON Semiconductor	D44VH10	104Kb / 5P	Complementary Silicon Power Transistors November, 2014 ??Rev. 8

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