2SD965 datasheet(1/3 Pages) ISC

номер детали	2SD965

подробное описание детали	isc NPN Silicon Transistor

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isc NPN Silicon Transistor

2SD965

FEATURES

·

Low collector to emitter saturation voltage Vce(sat)

·

Satisfactory operation performances at high

efficiency with the low-voltage power supply

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

40

V

VCEO

Collector-Emitter Voltage

20

V

VEBO

Emitter-Base Voltage

6

V

IC

Collector Current-Continuous

5

A

PC

Collector Power Dissipation

@TC=25℃

0.75

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

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