| поискавой системы для электроныых деталей |
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2SB1167 датащи(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SB1167 датащи(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() 1 isc Website:www.iscsemi.com isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SB1167 DESCRIPTION · Collector–Emitter Sustaining Voltage VCEO: -100 V(Min) · Low Collector Saturation Voltage : VCE(sat) = -0.4V(Max.)@ IC=-1.5A · Complement to the NPN 2SD1724 · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for high voltage and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -3 A PC Collector Power Dissipation TC=25℃ -20 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 6.5 ℃ /W |
Аналогичный номер детали - 2SB1167 |
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Аналогичное описание - 2SB1167 |
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