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LM2830XMF датащи(PDF) 13 Page - National Semiconductor (TI) |
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LM2830XMF датащи(HTML) 13 Page - National Semiconductor (TI) |
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13 / 24 page ![]() Calculating Efficiency, and Junction Temperature The complete LM2830 DC/DC converter efficiency can be calculated in the following manner. Or Calculations for determining the most significant power losses are shown below. Other losses totaling less than 2% are not discussed. Power loss (P LOSS) is the sum of two basic types of losses in the converter: switching and conduction. Conduction losses usually dominate at higher output loads, whereas switching losses remain relatively fixed and dominate at lower output loads. The first step in determining the losses is to calculate the duty cycle (D): V SW is the voltage drop across the internal PFET when it is on, and is equal to: V SW =IOUT xRDSON V D is the forward voltage drop across the Schottky catch diode. It can be obtained from the diode manufactures Elec- trical Characteristics section. If the voltage drop across the inductor (V DCR) is accounted for, the equation becomes: The conduction losses in the free-wheeling Schottky diode are calculated as follows: P DIODE =VD xIOUT x (1-D) Often this is the single most significant power loss in the circuit. Care should be taken to choose a Schottky diode that has a low forward voltage drop. Another significant external power loss is the conduction loss in the output inductor. The equation can be simplified to: P IND =IOUT 2 xR DCR The LM2830 conduction loss is mainly associated with the internal PFET: If the inductor ripple current is fairly small, the conduction losses can be simplified to: P COND =IOUT 2 xR DSON xD Switching losses are also associated with the internal PFET. They occur during the switch on and off transition periods, where voltages and currents overlap resulting in power loss. The simplest means to determine this loss is to empirically measuring the rise and fall times (10% to 90%) of the switch at the switch node. Switching Power Loss is calculated as follows: P SWR = 1/2(VIN xIOUT xFSW xTRISE) P SWF = 1/2(VIN xIOUT xFSW xTFALL) P SW =PSWR +PSWF Another loss is the power required for operation of the inter- nal circuitry: P Q =IQ xVIN I Q is the quiescent operating current, and is typically around 3.3mA for the 1.6MHz frequency option. Typical Application power losses are: Power Loss Tabulation V IN 5.0V V OUT 3.3V P OUT 3.3W I OUT 1.0A V D 0.45V P DIODE 150mW F SW 1.6MHz I Q 3.3mA P Q 17mW T RISE 4nS P SWR 6mW T FALL 4nS P SWF 6mW R DS(ON) 150m Ω P COND 100mW IND DCR 70m Ω P IND 70mW D 0.667 P LOSS 345mW η 88% P INTERNAL 125mW ΣP COND +PSW +PDIODE +PIND +PQ =PLOSS ΣP COND +PSWF +PSWR +PQ =PINTERNAL P INTERNAL = 125mW Thermal Definitions T J = Chip junction temperature T A = Ambient temperature RθJC = Thermal resistance from chip junction to device case RθJA = Thermal resistance from chip junction to ambient air Heat in the LM2830 due to internal power dissipation is removed through conduction and/or convection. Conduction: Heat transfer occurs through cross sectional areas of material. Depending on the material, the transfer of heat can be considered to have poor to good thermal con- ductivity properties (insulator vs. conductor). Heat Transfer goes as: Silicon → package → lead frame → PCB Convection: Heat transfer is by means of airflow. This could be from a fan or natural convection. Natural convection occurs when air currents rise from the hot device to cooler air. Thermal impedance is defined as: www.national.com 13 |
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