TSSS2600

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Vishay Semiconductors

Rev. 1.7, 24-Aug-11

2

Document Number: 81042

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Fig. 1 - Power Dissipation Limit vs. Ambient Temperature

Fig. 1 - Forward Current Limit vs. Ambient Temperature

0

50

100

150

200

250

94 8029

R

thJA

T

amb - Ambient Temperature (°C)

100

80

60

40

20

0

0

25

50

75

100

125

94 7916

R

thJA

T

amb - Ambient Temperature (°C)

100

80

60

40

20

0

BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

MIN.

TYP.

MAX.

UNIT

Forward voltage

IF = 100 mA, tp = 20 ms

VF

1.25

1.6

V

IF = 1.5 A, tp = 100 μs

VF

2.2

V

Temperature coefficient of VF

IF = 100 mA

TKVF

- 1.3

mV/K

Reverse current

VR = 5 V

IR

100

μA

Junction capacitance

VR = 0 V, f = 1 MHz, E = 0

Cj

30

pF

Radiant intensity

IF = 100 mA, tp = 20 ms

Ie

12.6

3

mW/sr

IF = 1.5 A, tp = 100 μs

Ie

25

mW/sr

Radiant power

IF = 100 mA, tp = 20 ms

φe

20

mW

Temperature coefficient of

φe

IF = 100 mA

TK

φe

- 0.8

%/K

Angle of half intensity

horizontal

ϕ1

± 25

deg

vertical

ϕ2

± 60

deg

Peak wavelength

IF = 100 mA

λp

950

nm

Spectral bandwidth

IF = 100 mA

Δλ

50

nm

Temperature coefficient of

λp

IF = 100 mA

TK

λp

0.2

nm/K

Rise time

IF = 100 mA

tr

800

ns

IF = 1.5 A

tr

400

ns

Fall time

IF = 100 mA

tf

800

ns

IF = 1.5 A

tf

400

ns

Virtual source diameter

d2

mm