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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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ISC073N12LM6 датащи(PDF) 4 Page - Infineon Technologies AG |
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ISC073N12LM6 датащи(HTML) 4 Page - Infineon Technologies AG |
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4 / 11 page  4 OptiMOSTM6Power-Transistor,120V ISC073N12LM6 Rev.2.0,2022-12-13 Final Data Sheet 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Drain-source breakdown voltage V(BR)DSS 120 - - V VGS=0V,ID=1mA Gate threshold voltage VGS(th) 1.2 1.7 2.2 V VDS=VGS,ID=50µA Zero gate voltage drain current IDSS - - 0.1 10 1 100 µA VDS=100V,VGS=0V,Tj=25°C VDS=100V,VGS=0V,Tj=125°C Gate-source leakage current IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - - - 6.2 8.1 11.7 7.3 9.9 - m Ω VGS=10V,ID=40A VGS=4.5V,ID=20A VGS=3.3V,ID=6.6A Gate resistance RG 0.5 0.95 1.5 Ω - Transconductance gfs 45 81 - S |VDS| ≥2|ID|RDS(on)max,ID=40A Table5Dynamiccharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Input capacitance Ciss - 2000 2600 pF VGS=0V,VDS=60V,f=1MHz Output capacitance 1) Coss - 470 610 pF VGS=0V,VDS=60V,f=1MHz Reverse transfer capacitance 1) Crss - 12 21 pF VGS=0V,VDS=60V,f=1MHz Turn-on delay time td(on) - 7 - ns VDD=60V,VGS=10V,ID=20A, RG,ext=1.6 Ω Rise time tr - 3 - ns VDD=60V,VGS=10V,ID=20A, RG,ext=1.6 Ω Turn-off delay time td(off) - 18 - ns VDD=60V,VGS=10V,ID=20A, RG,ext=1.6 Ω Fall time tf - 5 - ns VDD=60V,VGS=10V,ID=20A, RG,ext=1.6 Ω Table6Gatechargecharacteristics2) Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Gate to source charge 1) Qgs - 5.6 7.3 nC VDD=60V,ID=20A,VGS=0to4.5V Gate charge at threshold 1) Qg(th) - 3.4 4.3 nC VDD=60V,ID=20A,VGS=0to4.5V Gate to drain charge 1) Qgd - 4.8 7.2 nC VDD=60V,ID=20A,VGS=0to4.5V Switching charge Qsw - 7 - nC VDD=60V,ID=20A,VGS=0to4.5V Gate charge total 1) Qg - 14.4 18 nC VDD=60V,ID=20A,VGS=0to4.5V Gate plateau voltage Vplateau - 2.8 - V VDD=60V,ID=20A,VGS=0to4.5V Gate charge total 1) Qg - 27 36 nC VDD=60V,ID=20A,VGS=0to10V Output charge 1) Qoss - 52 65 nC VDS=60V,VGS=0V 1) Defined by design. Not subject to production test. 2) See ″Gate charge waveforms″ for parameter definition |
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