TPCF8103 datasheet(2/3 Pages) TOSHIBA

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TPCF8103

ELECTRICAL CHARACTERISTICS（Ta＝25℃）

CHARACTERISTICS

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Gate Leakage Current

ＩＧＳＳ

ＶＧＳ＝±8Ｖ，ＶＤＳ＝0Ｖ

−

±10

μＡ

Drain Cut-off Current

ＩＤＳＳ

ＶＤＳ＝-20Ｖ，ＶＧＳ＝0Ｖ

−

-10

μＡ

Ｖ(ＢＲ)ＤＳＳ

ＩＤ＝-10ｍＡ，ＶＧＳ＝0Ｖ

-20

−

Ｖ

Drain-Source Breakdown

Voltage

Ｖ(ＢＲ)ＤＳＸ

ＩＤ＝-10ｍＡ，ＶＧＳ＝8Ｖ

-8

−

Ｖ

Gate Threshold Voltage

Ｖｔｈ

ＶＤＳ＝-10Ｖ，ＩＤ＝-200µＡ

-0.5

−

-1.2

Ｖ

ＶＧＳ＝-1.8Ｖ，ＩＤ＝-1.4Ａ

−

215

300

ＶＧＳ＝-2.5Ｖ，ＩＤ＝-2.8Ａ

−

110

160

Drain-Source ON Resistance

ＲＤＳ(ＯＮ)

ＶＧＳ＝-4.5Ｖ，ＩＤ＝-2.8Ａ

−

110

mΩ

Forward Transfer Admittance

￨Ｙｆｓ￨

ＶＤＳ＝-10Ｖ，ＩＤ＝-2.8Ａ

3.0

6.0

−

Ｓ

Input Capacitance

Ｃｉｓｓ

−

470

−

Reverse Transfer Capacitance

Ｃｒｓｓ

−

Output Capacitance

Ｃｏｓｓ

ＶＤＳ＝-10Ｖ，ＶＧＳ＝0Ｖ

ｆ＝1ＭＨｚ

−

ｐＦ

Rise Time

ｔｒ

−

Turn-on Time

ｔｏｎ

−

Fall Time

ｔｆ

−

Switching

Time

Turn-off Time

ｔｏｆｆ

−

ｎｓ

Total Gate Charge (Gate-Source

Plus Gate-Drain)

Ｑｇ

−

Gate-Source Charge

Ｑｇｓ

−

4.5

−

Gate-Drain(“Miller”)Charge

Ｑｇｄ

ＶＤＤ≒-16Ｖ，ＶＧＳ＝-5Ｖ

ＩＤ＝-2.7Ａ

−

1.5

−

ｎＣ

SOURCE - DRAIN DIODE RATINGS AND CHARACTERISTICS（Ta＝25℃）

CHARACTERISTICS

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Pulse Drain Reverse Current

(Note1)

ＩＤＲＰ

−

-10.8

Ａ

Diode Forward Voltage

ＶＤＳＦ

ＩＤＲ＝-2.7Ａ，ＶＧＳ＝0Ｖ

−

1.2

Ｖ

Note1

Please use devices on condition that the channel temperature is below 150℃.

Note2:

(a) Device mounted on glass-epoxy board (a)

(b) Device mounted on glass-epoxy board (b)

FR-4

25.4×25.4×0.8

(Unit in mm)

(a)

(b)

Note3:

VDD=-16V, Tch=25℃(initial), L=0.5mH, RG=25Ω, IAR=-1.35A

Note4:

Repetitive rating ; Pulse Width Limited by Max. Channel Temperature.

RL=7.14Ω

VOUT

VDD≒-10V

ID=-1.4A

VGS

-5V

Duty≦1%,tw=10us

4.7Ω

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