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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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ST8812FX датащи(PDF) 3 Page - STMicroelectronics |
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ST8812FX датащи(HTML) 3 Page - STMicroelectronics |
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3 / 10 page  ST8812FX Electrical characteristics 3/10 2 Electrical characteristics (TCASE = 25°C; unless otherwise specified) Table 3. Electrical characteristics Note: 1 Pulsed duration = 300 µs, duty cycle ≤1.5%. Symbol Parameter Test Conditions Min. Typ. Max. Unit ICES Collector Cut-off Current (VBE = 0) VCE = 1150V VCE = 1150V Tc= 125°C 1 2 mA mA IEBO Emitter Cut-off Current (IC = 0) VEB = 14V 1mA VCEO(sus) Note: 1 Collector-Emitter Sustaining Voltage (IB = 0) IC = 100mA 600 V VCE(sat) Note: 1 Collector-Emitter Saturation Voltage IC = 4A _____ IB = 0.8A IC = 4A ___ __ IB = 1.2A 3 1.5 V V VBE(sat) Note: 1 Base-Emitter Saturation Voltage IC = 4A ____ _ IB = 0.8A 1.3 V hFE DC Current Gain IC = 1A _____ VCE = 5V IC = 5A _____ VCE = 1V IC = 5A _____ VCE = 5V 4.5 25 5 9 ts tf INDUCTIVE LOAD Storage Time Fall Time IC = 4A ____ _ RBB= 0 VClamp = 480V VBE(off) = -5V IB1 = 0.8A _ LC= 220µH (See Figure 8) 1 60 1.6 120 µs ns |
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