TLHG420., TLHO420., TLHR420., TLHY420.

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Vishay Semiconductors

Rev. 2.3, 26-Feb-18

2

Document Number: 83005

For technical questions, contact: LED@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Note

(1) Driving the LED in reverse direction is suitable for a short term application

ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)

TLHG420., TLHO420., TLHR420., TLHY420.

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

Reverse voltage (1)

VR

6V

DC forward current

IF

30

mA

Surge forward current

tp

≤ 10 μs

IFSM

1A

Power dissipation

PV

100

mW

Junction temperature

Tj

100

°C

Operating temperature range

Tamb

-40 to +100

°C

Storage temperature range

Tstg

-55 to +100

°C

Soldering temperature

t

≤ 5 s, 2 mm from body

Tsd

260

°C

Thermal resistance junction-to-ambient

RthJA

400

K/W

OPTICAL AND ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

TLHR420., RED

PARAMETER

TEST CONDITION

PARTS

SYMBOL

MIN.

TYP.

MAX.

UNIT

Luminous intensity

IF = 10 mA

TLHR4200

IV

48

-

mcd

TLHR4201

IV

6.3

10

-

mcd

TLHR4205

IV

10

15

-

mcd

Dominant wavelength

IF = 10 mA

λd

612

-

625

nm

Peak wavelength

IF = 10 mA

λp

-

635

-

nm

Angle of half intensity

IF = 10 mA

ϕ

-± 22

-

deg

Forward voltage

IF = 20 mA

VF

-2

3

V

Reverse current

VR = 6 V

IR

-

-

10

μA

Junction capacitance

VR = 0 V, f = 1 MHz

Cj

-50

-

pF

OPTICAL AND ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

TLHO420., SOFT ORANGE

PARAMETER

TEST CONDITION

PARTS

SYMBOL

MIN.

TYP.

MAX.

UNIT

Luminous intensity

IF = 10 mA

TLHO4200

IV

410

-

mcd

TLHO4201

IV

10

18

-

mcd

Dominant wavelength

IF = 10 mA

λd

598

-

611

nm

Peak wavelength

IF = 10 mA

λp

-

605

-

nm

Angle of half intensity

IF = 10 mA

ϕ

-± 22

-

deg

Forward voltage

IF = 20 mA

VF

-2.4

3

V

Reverse current

VR = 6 V

IR

-

-

10

μA

Junction capacitance

VR = 0 V, f = 1 MHz

Cj

-50

-

pF