Preliminary Datasheet

1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE

AP2115

Jul. 2011 Rev 1. 1

BCD Semiconductor Manufacturing Limited

8

Electrical Characteristics (Continued)

AP2115-2.5 Electrical Characteristics (Note 2)

VIN=3.5V, CIN=4.7µF (Ceramic), COUT=4.7µF (Ceramic), Typical TA=25°C, Bold typeface applies over -40OC≤TJ≤85OC

ranges, unless otherwise specified (Note 3).

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Output Voltage

VOUT

VIN =3.5V, 1mA ≤ IOUT ≤ 30mA

98.5%

×VOUT

2.5

101.5%

×VOUT

V

Maximum Output Current

IOUT(MAX)

VIN=3.5V, VOUT=2.463V to 2.537V

1

A

Load Regulation

△

VOUT/VOUT

I

△ OUT

VOUT=2.5V, VIN=VOUT+1V

1mA ≤ IOUT ≤1A

0.2

1

%/A

Line Regulation

△

VOUT/VOUT

V

△ IN

3.5V≤VIN≤6V, IOUT=30mA

-0.1

0.02

0.1

%/V

Dropout Voltage

VDROP

IOUT =1A

450

750

mV

Quiescent Current

IQ

VIN=3.5V, IOUT=0mA

60

80

µA

Standby Current

ISTD

VIN=3.5V, VEN in OFF mode

0.01

1.0

µA

f=100Hz

65

Power

Supply

Rejection

Ratio

PSRR

Ripple 1Vp-p

VIN=3.5V,

IOUT=100mA

f=1KHz

65

dB

Output Voltage

Temperature Coefficient

△

VOUT/VOUT

T

△

IOUT=30mA

±30

ppm/°C

Short Current Limit

ISHORT

VOUT=0V

50

mA

RMS Output Noise

VNOISE

10Hz ≤ f ≤100kHz

30

µVRMS

VEN High Voltage

VIH

Enable logic high, regulator on

1.5

VEN Low Voltage

VIL

Enable logic low, regulator off

0.4

V

Start-up Time

tS

No Load

20

µs

EN Pull Down Resistor

RPD

3.0

M

Ω

VOUT Discharge Resistor

RDCHG

Set EN pin at Low

60

Ω

Thermal

Shutdown

Temperature

TOTSD

160

Thermal

Shutdown

Hysteresis

THYOTSD

25

°C

SOIC-8

74.6

Thermal Resistance

θJC

SOT-89-5

47

°C/W

Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input

voltage must be applied before a current source load is applied.

Note 3: Production testing at TA=25°C. Over temperature specifications guaranteed by design only.