TPD2017FN datasheet(8/17 Pages) TOSHIBA

номер детали	TPD2017FN

подробное описание детали	Toshiba Intelligent Power Device Silicon Monolithic MOS Integrated Circuit

PDF	17 Pages

Scroll/Zoom	100%

производитель	TOSHIBA [Toshiba Semiconductor]

домашняя страница	http://www.semicon.toshiba.co.jp/eng

Logo

8 / 17 page

TPD2017FN

2022-03-15

Toshiba Electronic Devices & Storage Corporation

9. Operating Ranges

Table 9.1 Operating supply voltage

Characteristics

Symbol

Condition

Min

Typ.

Max

Unit

Operating supply voltage

VDD(opr)

Tj = 25°C

2.7

5.5

10. Electrical Characteristics

Table 10.1 Electrical Characteristics

(Tj = 25°C, VDD = 2.7 to 5.5V unless otherwise specified)

Characteristics

Symbol

Test condition

Min

Typ.

Max

Unit

Output clamp voltage

V(CL)OUT

IOUT = 10mA, VIN = 0V

Supply current

IDD(OFF)

VDD =5V, VIN = 0V

1.8

2.6

IDD(ON)

VDD =5V, VIN = 5V,

All outputs open

2.2

3.1

Input voltage

“L” level

VIL

0.8

“H” level

VIH

2.0

Input current

IIL

VIN = 0V

−1.0

1.0

μA

IIH

VIN = 5V

On resistance

RDS(ON)

VDD = 5V, VIN = 5V,

IOUT = 0.5A

0.40

0.55

Output leakage current

IOL

VL = 40V, VIN = 0V,

Per output

μA

Over current detection

IOC

VDD = 5V

1.0

1.5

2.5

Over current protection

operation time

tOFF-DUTY

VDD = 5V

1.5

3.0

4.8

Over

temperature

detection

Temperature

TSD

VDD = 5V

150

175

200

°C

Hysteresis

ΔTSD

VDD = 5V

Switching time

tON

Refer to test circuit 1

μs

tOFF

Single pulse energy

Ta=25℃, IOUT=0.75A

(1-channel operation)

1502)

2) Not subject to production test

TPD2017FN датащи(PDF) 8 Page - Toshiba Semiconductor

TPD2017FN датащи(HTML) 8 Page - Toshiba Semiconductor

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17

датащи скачать

ссылки URL