VS-5.MT...KPbF, VS-9.MT...KPbF, VS-11.MT...KPbF Series

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Vishay Semiconductors

Revision: 25-Nov-2022

3

Document Number: 94353

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Note

• Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC

Fig. 1 - Current Ratings Characteristic

Fig. 2 - Forward Voltage Drop Characteristics

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

5.MT...K

VALUES

9.MT...K

VALUES

11.MT...K

UNITS

Maximum junction operating

and storage temperature range

TJ, TStg

-40 to +125

°C

Maximum thermal resistance,

junction to case

RthJC

DC operation per module

0.18

0.14

0.12

K/W

DC operation per junction

1.07

0.86

0.70

120 °C rect. conduction angle per module

0.19

0.15

0.12

120 °C rect. conduction angle per junction

1.17

0.91

0.74

Maximum thermal resistance,

case to heatsink per module

RthCS

Mounting surface smooth, flat and grased

0.03

Mounting

torque ± 10 %

to heatsink

A mounting compound is recommended and

the torque should be rechecked after a period of

3 hours to allow for the spread of the

compound. Lubricated threads.

4 to 6

Nm

to terminal

3 to 4

Approximate weight

225

g

ΔR CONDUCTION PER JUNCTION

DEVICES

SINUSOIDAL CONDUCTION

AT TJ MAXIMUM

RECTANGULAR CONDUCTION

AT TJ MAXIMUM

UNITS

180°

120°

90°

60°

30°

180°

120°

90°

60°

30°

5.MT...K

0.072

0.085

0.108

0.152

0.233

0.055

0.091

0.117

0.157

0.236

K/W

9.MT...K

0.033

0.039

0.051

0.069

0.099

0.027

0.044

0.055

0.071

0.100

11.MT...K

0.027

0.033

0.042

0.057

0.081

0.023

0.037

0.046

0.059

0.082

Total Output Current (A)

10

20

30

40

50

60

0

120°

(Rect.)

5.MT..K Series

100

120

130

80

94353_01

90

110

~

+

-

Instantaneous On-State Voltage (V)

2

1

3456

7

0

94353_02

T

J = 25 °C

5.MT..K Series

Per junction

T

J = 125 °C

100

1000

1

10