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TLP352F датащи(PDF) 5 Page - Toshiba Semiconductor

номер детали TLP352F
подробное описание детали  Photocouplers GaAℓAs Infrared LED & Photo IC
PDF  21 Pages
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производитель  TOSHIBA [Toshiba Semiconductor]
домашняя страница  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TLP352F датащи(HTML) 5 Page - Toshiba Semiconductor

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TLP352,TLP352F
5
9.
9.
9.
9. Recommended Operating Conditions (Note)
Recommended Operating Conditions (Note)
Recommended Operating Conditions (Note)
Recommended Operating Conditions (Note)
Characteristics
Input on-state current
Input off-state voltage
Supply voltage
Peak high-level output current
Peak low-level output current
Operating frequency
Symbol
IF(ON)
VF(OFF)
VCC
IOPH
IOPL
f
Note
(Note 1)
(Note 2)
(Note 3)
Min
6.5
0
15
Typ.
Max
10
0.8
30
-2.0
+2.0
50
Unit
mA
V
A
kHz
Note:
The recommended operating conditions are given as a design guide necessary to obtain the intended
performance of the device. Each parameter is an independent value. When creating a system design using
this device, the electrical characteristics specified in this datasheet should also be considered.
Note:
A ceramic capacitor (0.1 µF) should be connected between pin 8 and pin 5 to stabilize the operation of a high-
gain linear amplifier. Otherwise, this photocoupler may not switch properly. The bypass capacitor should be
placed within 1 cm of each pin.
Note:
If the rising slope of the supply voltage(VCC) for the detector is steep,stable operation of the internal circuits
cannot be guaranteed.
Be sure to set 3.0 V/µs or less for a rising slope of the VCC.
Note 1: The rise and fall times of the input on-current should be less than 0.5 µs.
Note 2: Denotes the operating range, not the recommended operating condition.
Note 3: Exponential waveform. IOPH ≥ -2.0 A (≤ 0.3 µs), IOPL ≤ 2.0 A (≤ 0.3 µs), Ta = 125 
10.
10.
10.
10. Electrical Characteristics (Note) (Unless otherwise specified, T
Electrical Characteristics (Note) (Unless otherwise specified, T
Electrical Characteristics (Note) (Unless otherwise specified, T
Electrical Characteristics (Note) (Unless otherwise specified, Taaaa = -40 to 125
= -40 to 125
= -40 to 125
= -40 to 125 
))))
Characteristics
Input forward voltage
Input forward voltage
temperature coefficient
Input reverse current
Input capacitance
Peak high-level output current
Peak low-level output current
High-level output voltage
Low-level output voltage
High-level supply current
Low-level supply current
Threshold input current (L/H)
Threshold input voltage (H/L)
Supply voltage
UVLO threshold voltage
UVLO hysteresis
Symbol
VF
∆VF/∆Ta
IR
Ct
IOPH
IOPL
VOH
VOL
ICCH
ICCL
IFLH
VFHL
VCC
VUVLO+
VUVLO-
UVLOHYS
Note
(Note 1)
(Note 1)
Test
Circuit
Fig.
13.1.1
Fig.
13.1.2
Fig.
13.1.3
Fig.
13.1.4
Fig.
13.1.5
Fig.
13.1.6
Test Condition
IF = 10 mA, Ta = 25 
IF = 10 mA
VR = 5 V, Ta = 25 
V = 0 V, f = 1 MHz, Ta = 25 
IF = 5 mA, VCC = 30 V,
V8-6 = -3.5 V
IF = 5 mA, VCC = 15 V,
V8-6 = -7.0 V
IF = 0 mA, VCC = 30 V,
V6-5 = 2.5 V
IF = 0 mA, VCC = 15 V,
V6-5 = 7.0 V
IF = 5 mA, RL = 200 Ω,
VCC1 = +15 V, VEE1 = -15 V
VF = 0.8 V, RL = 200 Ω,
VCC1 = +15 V, VEE1 = -15 V
IF = 10 mA, VCC = 30 V,
VO = Open
IF = 0 mA, VCC = 30 V,
VO = Open
VCC = 15 V, VO > 1 V
VCC = 15 V, VO < 1 V
IF = 5 mA, VO > 2.5 V
IF = 5 mA, VO < 2.5 V
Min
1.4
1.0
2.0
11.0
0.8
15
11.0
9.5
Typ.
1.55
-2.0
95
-1.6
1.6
13.7
-14.9
1.5
1.5
1.0
12.5
11.0
1.5
Max
1.7
10
-1.0
-2.0
-12.5
3.0
3.0
5
30
13.5
12.0
Unit
V
mV/
µA
pF
A
V
mA
V
Note:
All typical values are at Ta = 25 .
Note:
This device is designed for low power consumption, making it more sensitive to ESD than its predecessors.
Extra care should be taken in the design of circuitry and pc board implementation to avoid ESD problems.
Note 1: IO application time ≤ 50 µs, single pulse.
2016-09-27
Rev.7.0
©2016 Toshiba Corporation



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