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TLP223GAF датащи(PDF) 3 Page - Toshiba Semiconductor |
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TLP223GAF датащи(HTML) 3 Page - Toshiba Semiconductor |
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3 / 18 page ![]() TLP223GA,TLP223GAF 3 8. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 �) LED Detector Common Characteristics Input forward current Input forward current derating Input forward current (pulsed) Input reverse voltage Input power dissipation Input power dissipation derating Junction temperature OFF-state output terminal voltage ON-state current ON-state current derating ON-state current (pulsed) Output power dissipation Output power dissipation derating Junction temperature Storage temperature Operating temperature Lead soldering temperature Isolation voltage (Ta ≥ 100 �) (100 µs pulse, 100 pps) (Ta ≥ 100 �) (Ta ≥ 25 �) (t = 100 ms, Duty = 1/10) (Ta ≥ 25 �) (10 s) (AC, 60 s, R.H. ≤ 60 %) Symbol IF ∆IF/∆Ta IFP VR PD ∆PD/∆Ta Tj VOFF ION ∆ION/∆Ta IONP PO ∆PO/∆Ta Tj Tstg Topr Tsol BVS Note (Note 1) Rating 30 -1.2 1 6 50 -2 125 400 120 -1.2 360 500 -5.0 125 -55 to 125 -40 to 110 260 5000 Unit mA mA/� A V mW mW/� � V mA mA/� mA mW mW/� � Vrms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: This device is considered as a two-terminal device: Pins 1 and 2 are shorted together, and pins 3 and 4 are shorted together. 9. Recommended Operating Conditions (Note) Characteristics Supply voltage Input forward current ON-state current Symbol VDD IF ION Note Min � 5 � Typ. � 7.5 � Max 320 25 120 Unit V mA mA Note: The recommended operating conditions are given as a design guide necessary to obtain the intended performance of the device. Each parameter is an independent value. When creating a system design using this device, the electrical characteristics specified in this data sheet should also be considered. 2022-02-02 Rev.4.0 ©2020-2022 Toshiba Electronic Devices & Storage Corporation |
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