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PCFF55H120SWF датащи(PDF) 2 Page - ON Semiconductor

номер детали PCFF55H120SWF
подробное описание детали  DiodePower, Bare Die Gen VII, Fast Recovery 1200 V, 55 A
PDF  4 Pages
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производитель  ONSEMI [ON Semiconductor]
домашняя страница  http://www.onsemi.com
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PCFF55H120SWF датащи(HTML) 2 Page - ON Semiconductor

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ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Ratings
Unit
Repetitive Peak Reverse Voltage
VRRM
1200
V
DC Forward Current, limited by TJ max (Note 1)
IF
55
A
Pulsed Forward Current, tp limited by TJ max (Note 2)
IFM
165
A
Operating Junction Temperature
TJ
−40 to +175
°C
Storage Temperature Range
Tstg
+18 to +28
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Nominal forward current at Tc = 100°C when assembled in power module
2. Not subject to production test – verified by design/characterization.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
STATIC CHARACTERISTICS (Tested on Wafers)
Breakdown Voltage
VBR
IR = 1 mA
1200
V
Reverse Leakage Current
IR
VR = 1200 V
10
mA
Forward Voltage
VF
IF = 55 A
1.78
2.08
V
ELECTRICAL CHARACTERISTICS (Not subjected to production test – verified by design/characterization)
Breakdown Voltage
VBR
IR = 1 mA
TJ = −40°C
1200
V
Forward Voltage
VF
IF = 55 A
TJ = 175°C
1.9
V
Reverse Recovery Time
Trr
IF = 55 A, VR = 600 V,
dIF/dt = 500 A/ms, TJ = 25°C
287.4
nS
Reverse Recovery Charge
Qrr
3.0
mC
Reverse Recovery Current
IRRM
20.7
A
Reverse Recovery Time
Trr
IF = 55 A, VR = 600 V,
dIF/dt = 500 A/ms, TJ = 175°C
481.5
nS
Reverse Recovery Charge
Qrr
7.5
mC
Reverse Recovery Current
IRRM
31.1
A
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NOTE: Switching characteristics and thermal properties are depending strongly on module design and mounting technology.



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