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2SC5852 датащи(PDF) 2 Page - Renesas Technology Corp |
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2SC5852 датащи(HTML) 2 Page - Renesas Technology Corp |
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2 / 6 page ![]() 2SC5852 Rev.1.00 Aug 10, 2005 page 2 of 5 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO 30 V IC = 10 µA, IE = 0 Collector to emitter breakdown voltage V(BR)CEO 20 V IC = 1 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO 4 V IE = 10 µA, IC = 0 Collector cutoff current ICEO 0.5 µA VCE = 10 V, RBE = ∞ Emitter cutoff current IEBO 0.5 µA VEB = 2 V, IC =0 DC current transfer ratio hFE* 1 60 200 VCE = 6 V, IC = 1 mA Collector to emitter saturation voltage VCE(sat) 0.17 V IC = 20 mA, IB = 4 mA Base to emitter voltage VBE 0.72 V VCE = 6 V, IC = 1 mA Gain bandwidth product fT 940 MHz VCE = 6V, IC = 5 mA Collector output capacitance Cob 0.9 pF VCB = 10 V, IE = 0, f = 1 MHz Notes: 1. The 2SC5852 is grouped by hFE as follows. Grade B C Mark QB QC hFE 60 to 120 100 to 200 |
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