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IN100-D1-R-RC1F датащи(PDF) 35 Page - List of Unclassifed Manufacturers

номер детали IN100-D1-R-RC1F
подробное описание детали  Ultra-Low Power Bluetooth Beacon SoC
PDF  49 Pages
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производитель  ETC [List of Unclassifed Manufacturers]
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N1EDOC-DS-IN100-EN-V1.3
Table 16 : GPIO pin characteristics
Parameter
Description
Min.
Typ.
Max.
Unit
VIL
Input low voltage
0.3*VCC
V
VIH
Input high voltage
0.7*VCC
V
VOL
Output low voltage
0.4
V
VOH
Output high voltage
VCC-0.4V
V
IOH
Output high drive current
4
mA
IOS
Output standard drive current
4
mA
tLH/tHL
Rising time/Falling time
4
ns
(standard
drive)
@standard drive with 12pf
load10%~90%
RPU
GPIO pull-up resistance
25K
ohm
RPD
GPIO pull-down resistance
25K
ohm
Note: The data measured are preliminary and subject to change.
5.4. RF performance characteristics
Characteristics are measured over recommended operating conditions unless otherwise specified.
The typical operation condition referred to is Ta = 25°C and VCC = 3.0V. The specifications are valid
for -40°C ≤ TA ≤ +85°C and 1.1V ≤ VCC ≤ 3.6V. All performance data are measured via an evaluation
board with a 50 ohm antenna connector.
5.4.1. General RF Characteristics
Table 17 : General RF characteristics
Parameter
Description
Min.
Typ.
Max.
Unit
Radio frequency range
2250
2550
MHz
RF PLL channel spacing
channel spacing is user
programmable
1
MHz
Frequency modulation deviation
1Mbps BLE
±250
kHz
Data rate
125
1000
kbps



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