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DGS 19-025AS

DGS

20-025A(S)

DGSK 40-025A(S)

0,0

0,5

1,0

1,5

2,0

2,5

0,01

0,1

1

10

0,00001

0,0001

0,001

0,01

0,1

1

10

0,01

0,1

1

10

t

s

K/W

0,1

1

10

100

1000

10

100

C

J

I

F

A

V

F

V

R

V

pF

V

Z

thJC

T

125°C

25°C

T

300

30

Single Pulse

DGS 20-022/025A

TO-252

TO-220

Fig. 1 typ. forward characteristics

Fig. 2 typ. junction capacity

versus blocking voltage

Fig. 3 typ. thermal impedance junction to case

Note:

explanatory comparison of the basic operational behaviour of rectifier diodes and Gallium Arsenide

Schottky diodes:

conduction

forward characteristics

turn off characteristics

turn on characteristics

by majority + minority carriers

V

extraction of excess carriers

causes temperature dependant

reverse recovery (t

delayed saturation leads to V

FR

Rectifier Diode

by majority carriers only

V

reverse current charges

junction capacity C

not temperature dependant

no turn on overvoltage peak

GaAs Schottky Diode