| поискавой системы для электроныых деталей |
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11DF2 датащи(PDF) 1 Page - EIC discrete Semiconductors |
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11DF2 датащи(HTML) 1 Page - EIC discrete Semiconductors |
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1 / 2 page ![]() 11DF1 - 11DF2 ULTRA FAST RECTIFIER DIODES PRV : 100 - 200 Volts Io : 1.0 Ampere FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Superfast recovery time MECHANICAL DATA : * Case : DO-41 Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.339 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. SYMBOL 11DF1 11DF2 UNIT Maximum Recurrent Peak Reverse Voltage VRRM 100 200 V Maximum RMS Voltage VRMS 70 140 V Maximum DC Blocking Voltage VDC 100 200 V Maximum Average Forward Current Ta = 63 °C IF(AV) 1.0 A Maximum Peak Forward Surge Current, 8.3ms Single half sine wave Superimposed on rated load (JEDEC Method) Maximum Peak Forward Voltage at IF = 1.0 A VF 0.98 V Maximum DC Reverse Current at VRRM IR 10 µA Maximum Reverse Recovery Time ( Note 1 ) Trr 35 ns Junction Temperature Range TJ - 65 to + 150 °C Storage Temperature Range TSTG - 65 to + 150 °C Note : ( 1 ) Reverse Recovery Test Conditions : I F = 0.5 A, IR = 1.0 A, Irr = 0.25 A. Page 1 of 2 Rev. 02 : October 8, 2005 RATING IFSM 30 A DO - 41 Dimensions in inches and ( millimeters ) 1.00 (25.4) MIN. 0.107 (2.7) 0.080 (2.0) 0.205 (5.2) 0.166 (4.2) 1.00 (25.4) MIN. 0.034 (0.86) 0.028 (0.71) |
Аналогичный номер детали - 11DF2 |
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Аналогичное описание - 11DF2 |
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