NPN SILICON EPITAXIAL POWER TRANSISTOR

CSD1833

(9AW)

TO220

MARKING : AS BELOW

Low Freq. Power AMP.

ABSOLUTE MAXIMUM RATINGS(Ta=25deg C)

DESCRIPTION

SYMBOL

VALUE

UNIT

Collector -Base Voltage

VCBO

100

V

Collector -Emitter Voltage

VCEO

80

V

Emitter Base Voltage

VEBO

5

V

Collector Current (DC)

IC

7

A

Pulse*

10

A

Collector Power Dissipation Ta 25degC

PC

2

W

Tc=25 deg C

30

W

Junction Temperature

Tj

150

deg C

Storage Temperature Range

Tstg

-55 to +150

deg C

*Single Pulse Pw=100ms

ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)

DESCRIPTION

SYMBOL

TEST CONDITION

MIN

TYP

MAX

UNIT

Collector Emitter Voltage

VCEO

IC=1mA, IB=0

80

-

-

V

Collector Base Voltage

VCBO

IC=50uA, IE=0

100

-

-

V

Emitter Base Voltage

VEBO

IE=50uA,IC=0

5

-

-

V

Collector Cut off Current

ICBO

VCB=100V, IE=0

-

-

10

uA

ICEO

VCE=80, IB=0

-

-

1

uA

Emitter Cut off Current

IEBO

VBE=4V,IC=0

-

-

10

uA

Collector Emitter Saturation Voltage

VCE(Sat)**

IC=4A,IB=0,4A

-

-

1

V

Base Emitter Saturation Voltage

VBE(Sat)**

IC=4A,IB=0,4A

-

-

1.5

V

DC Current Gain

hFE**

IC=1A, VCE=5V

60

-

320

Dynamic Characteristics

Transition Frequency

ft

VCE=5V,IC=50mA,

-

5

-

MHz

f=5MHz

Collector Output Capacitance

Cob

VCB=10V, IE=0

-

150

-

pF

f=1MHz

hFE CLASSIFICATION**

D : 60-120;

E : 100-200,

F: 160-320

MARKING

CSD

CSD

CSD

1833D

1833E

1833F

**Pulse Test

Continental Device India Limited

Data Sheet

Page 1 of 3

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company