CP302-MPSH10

NPN - RF Transistor Die

50mA, 25 Volt

Die Size

14.5 x 14.5 MILS

Die Thickness

9.0 MILS

Base Bonding Pad Size

2.3 x 2.3 MILS

Emitter Bonding Pad Size

2.5 x 2.3 MILS

Top Side Metalization

Al – 30,000Å

Back Side Metalization

Au – 18,000Å

Wafer Diameter

4 INCHES

Gross Die Per Wafer

53,730

The CP302-MPSH10 is a silicon NPN RF transistor designed for low noise UHF/VHF amplifier

and high output oscillator applications.

MECHANICAL SPECIFICATIONS:

MAXIMUM RATINGS: (TA=25°C)

SYMBOL

UNITS

Collector-Base Voltage

VCBO

30

V

Collector-Emitter Voltage

VCEO

25

V

Emitter-Base Voltage

VEBO

3.0

V

Continuous Collector Current

IC

50

mA

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +150

°C

ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

ICBO

VCB=25V

100

nA

IEBO

VEB=2.0V

100

nA

BVCBO

IC=100µA

30

V

BVCEO

IC=1.0mA

25

V

BVEBO

IE=10µA

3.0

V

VCE(SAT)

IC=4.0mA, IB=0.4mA

0.50

V

VBE(ON)

VCE=10V, IB=4.0mA

0.95

V

hFE

VCE=10V, IC=4.0mA

60

fT

VCE=10V, IC=4.0mA, f=100MHz

650

MHz

Ccb

VCB=10V, IE=0, f=1.0MHz

0.70

pF

Crb

VCB=10V, IE=0, f=1.0MHz

0.35

0.65

pF

rb’Cc

VCB=10V, IC=4.0mA, f=31.8MHz

9.0

ps

BACKSIDE COLLECTOR

R2

E

B

R2 (9-November 2017)

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