CMMT591A datasheet(1/3 Pages) CDIL

номер детали	CMMT591A

подробное описание детали	PNP EPITAXIAL PLANAR SILICON TRANSISTOR

PDF	3 Pages

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производитель	CDIL [Continental Device India Limited]

домашняя страница	http://www.cdilsemi.com

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PNP EPITAXIAL PLANAR SILICON TRANSISTOR

CMMT591A

SOT-23

MARKING: 59A

Complementary CMMT491A

ABSOLUTE MAXIMUM RATINGS

DESCRIPTION

SYMBOL

VALUE

UNIT

Collector -Base Voltage

VCBO

40

V

Collector -Emitter Voltage

VCEO

40

V

Emitter Base Voltage

VEBO

5.0

V

Peak Pulse Current

ICM

2.0

A

Collector Current Continuous

IC

1.0

A

Base Current

IB

200

mA

Power Dissipation @Tamb=25 deg C

Ptot

500

mW

Operating & Storage Temperature Range

Tj, Tstg

-55 to +150

deg C

ELECTRICAL CHARACTERISTICS (Ta=25 deg C )

DESCRIPTION

SYMBOL

TEST CONDITION

MIN

MAX

UNIT

Collector -Base Voltage

VCBO

IC=100uA, IE=0

40

-

V

Collector -Emitter Voltage

VCEO

IC=10mA, IB=0

40

-

V

Emitter Base Voltage

VEBO

IE=100uA, IC=0

5.0

-

V

Collector Cut off Current

ICBO

VCB=30V, IE=0

-

100

nA

Emitter Cut off Current

IEBO

VEB=4V, IC=0

-

100

nA

Collector-Emitter Cut off Current

ICES

VCE=30V, VBE=0

-

100

nA

Collector Emitter Saturation Voltage

VCE(Sat)* IC=100mA,IB=1mA

-

0.20

V

IC=500mA,IB=20mA

-

0.35

V

IC=1A, IB=100mA

-

0.50

V

Base Emitter Saturation Voltage

VBE(Sat)* IC=1A, IB=50mA

-

1.1

V

Base Emitter on Voltage

VBE(on)*

IC=1A, VCE=5V

-

1.0

V

DC Current Gain

hFE

IC=1mA,VCE=5V

300

-

IC=100mA,VCE=5V*

300

800

IC=500mA,VCE=5V*

250

-

IC=1A, VCE=5V*

160

-

IC=2A, VCE=5V*

30

-

Dynamic Characteristics

Transition Frequency

ft

VCE=10V,IC=50mA,

150

-

MHz

f=100MHz

Output Capacitance

Cobo

VCB=10V, IE=0

-

10

pF

f=1MHz

*Pulsed Conditions pulse width=300us, Duty Cycle=2%

PIN CONFIGURATION (PNP)

1 = BASE

2 = EMITTER

3 = COLLECTOR

2

1

3

Continental Device India Limited

Data Sheet

Page 1 of 3

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company

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