CMBT4403 datasheet(2/3 Pages) CDIL

2 / 3 page

Continental Device India Limited

Data Sheet

Page 2 of 3

THERMAL RESISTANCE

From junction to ambient

Rth j–a

500 K/W

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified

Collector–emitter breakdown voltage

–IC = 1.0 mA; IB = 0

–V(BR)CEO >40 V

Collector–base breakdown voltage

–IC = 100 µA; IE = 0

–V(BR)CBO >40 V

Emitter–base breakdown voltage

–IE = 100 µA; IC = 0

–V(BR)EBO >5 V

Base cut–off current

–VCE = 35 V; –VEB = 0.4 V

–IBEX

0.1 mA

Collector cut–off current

–VCE = 35 V; –VEB = 0.4 V

–ICEX

0.1 mA

D.C. current gain

–IC = 0.1 mA; –VCE = 1 V

hFE

>30

–IC = 1.0 mA; –VCE = 1 V

hFE

>60

–IC = 10 mA; –VCE = 1 V

hFE

100

–IC = 150 mA; –VCE = 2 V

hFE

100 to 300

–IC = 500 mA; –VCE = 2 V

hFE

>20

Saturation voltage

–IC = 150 mA; –IB = 15 mA

–VCEsat

0.4 V

–VBEsat

0.75 to 0.95 V

–IC = 500 mA; –IB = 50 mA

–VCEsat

0.75 V

–VBEsat

1.3 V

Transition frequency

f = 100 MHz; –IC = 20 mA; –VCE = 10 V

200 MHz

Collector–base capacitance

IE = 0; –VCB = 10 V; f = 100 kHz

Ccb

8.5 pF

Emitter–base capacitance

IC = 0; –VBE = 0.5 V; f = 100 kHz

Ceb

<35 pF

Input impedance at f = 1 kHz;

–IC = 1 mA; –VCE = 10 V

hie

min.

1.5 kW

max.

15 kW

Voltage feed–back ratio at f = 1 kHz;

–IC = 1 mA; –VCE = 10 V

hre

min.0.1 × 10–4

max. 8 × 10–4

Small–signal curent gain at f = 1 kHz

–IC = 1 mA; –VCE = 10 V

hfe

min.

max.

500

CMBT4403

CMBT4403 датащи(PDF) 2 Page - Continental Device India Limited

CMBT4403 датащи(HTML) 2 Page - Continental Device India Limited

Html Pages

1 2 3

датащи скачать

ссылки URL