NPN SILICON EPITAXIAL TRANSISTOR

CD9581

TO-92

CBE

General Purpose Transistor.

ABSOLUTE MAXIMUM RATINGS(Ta=25deg C )

DESCRIPTION

SYMBOL

VALUE

UNIT

Collector -Base Voltage

VCBO

60

V

Collector -Emitter Voltage

VCEO

40

V

Emitter Base Voltage

VEBO

7.0

V

Collector Current

IC

100

mA

Power Dissipation

PD

500

mW

Operating & Storage Junction

TJ, Tstg

-65 to +125

deg C

Temperature Range

Lead Temperature for Soldering 1/16"

TL

280

deg C

From Body, For 10 Seconds

THERMAL RESISTANCE

Junction to Ambient

Rth(j-a)

200

deg C/W

ELECTRICAL CHARACTERISTICS (Ta=25 +- 3 deg C Unless Otherwise Specified)

DESCRIPTION

SYMBOL

TEST CONDITION

MIN

MAX

UNIT

Collector -Base Voltage

VCBO

IC=10uA, IE=0

60

-

V

Collector -Emitter Voltage

VCEO*

IC=1mA, IB=0

40

-

V

Emitter- Base Voltage

VEBO

IE=100uA, IC=0

7.0

-

V

Collector Cut-off Current

ICBO

VCB=40V, IE=0

-

50

nA

ICEO

VCE=35V, IB=0

-

1.0

uA

Emitter Cut -off Current

IEBO

VEB=7V, IC=0

-

200

nA

Forward Current Transfer Ratio

hFE

IC=10mA,VCE=10V

150

300

IC=100uA,VCE=10V

50

-

Collector Emitter (Sat) Voltage

VCE(Sat) * IC=50mA,IB=10mA

-

0.22

V

DYNAMIC CHARACTERISTICS

Cut off frequency

ft

VCE=5V, IC=10mA

100

350

MHz

Noise Figure

NF

VCE=5V, IC=12uA

-

12

dB

f=1kHz, Rs=k ohm

Fead Back Capacitance

Cre

VCB=10V, f=1MHz

-

4.0

pF

Forward Current Transfer Ratio(A.C)

hfe

IC=0.5mA, VCE=5V,

100

-

f=50 kHz

*Pulse test 300us Duty Cycle=2%

Continental Device India Limited

Data Sheet

Page 1 of 3

Continental Device India Limited

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