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IRF646 датащи(PDF) 1 Page - Inchange Semiconductor Company Limited

номер детали IRF646
подробное описание детали  isc N-Channel Mosfet Transistor
PDF  2 Pages
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производитель  ISC [Inchange Semiconductor Company Limited]
домашняя страница  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

IRF646 датащи(HTML) 1 Page - Inchange Semiconductor Company Limited

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isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc N-Channel Mosfet Transistor
IRF646
·
FEATURES
·
Avalanche Rugged Technology
·
Rugged Gate Oxide Technology
·
Lower Input Capacitance
·
Improved Gate Charge
·
Extended Safe Operating Area
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·
DESCRITION
·
Designed especially for high voltage,high speed applications,
such as off-line switching power supplies , UPS,AC and DC
motor controls,relay and solenoid drivers.
·
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
275
V
VGS
Gate-Source Voltage-Continuous
±
20
V
ID
Drain Current-Continuous
14
A
IDM
Drain Current-Single Plused
56
A
PD
Total Dissipation @TC=25℃
125
W
Tj
Max. Operating Junction Temperature
-55~150
℃
Tstg
Storage Temperature
-55~150
℃
·
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
1.0
℃
/W
RJA
Junction-to-Ambient
80
℃
/W


Аналогичный номер детали - IRF646

производительномер деталидатащиподробное описание детали
logo
Intersil Corporation		 IRF646 INTERSIL-IRF646 Datasheet
60Kb / 7P		 14A, 275V, 0.280 Ohm, N-Channel Power MOSFET
June 1999
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