CSDD-8M

CSDD-8N

SILICON CONTROLLED RECTIFIER

8.0 AMP, 600 THRU 800 VOLTS

Central

Semiconductor Corp.

TM

R1 (24-September 2004)

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CSDD-8M

series type is an Epoxy Molded Silicon Controlled

Rectifier designed for sensing circuit applications

and control systems.

MARKING CODE: FULL PART NUMBER

MAXIMUM RATINGS: (TC=25°C unless otherwise noted)

SYMBOL

CSDD

CSDD

-8M

-8N

UNITS

Peak Repetitive Off-State Voltage

VDRM, VRRM

600

800

V

RMS On-State Current (TC=90°C)

IT(RMS)

8.0

A

Peak One Cycle Surge (t=10ms)

ITSM

70

A

Peak Gate Power (tp=10µs)

PGM

40

W

Average Gate Power Dissipation

PG (AV)

1.0

W

Peak Forward Gate Current (tp=10µs)

IFGM

4.0

A

Peak Forward Gate Voltage (tp=10µs)

VFGM

16

V

Peak Reverse Gate Voltage (tp=10µs)

VRGM

5.0

V

Critical Rate of Rise of On-State Current

di/dt

50

A/µs

Storage Temperature

Tstg

-40 to +150

°C

Junction Temperature

TJ

-40 to +125

°C

Thermal Resistance

ΘJA

60

°C/W

Thermal Resistance

ΘJC

2.5

°C/W

ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

IDRM, IRRM

Rated VDRM, VRRM

10

µA

IDRM, IRRM

Rated VDRM, VRRM, TC=125°C

2.0

mA

IGT

VD=12V, RL=10Ω

3.0

15

mA

IH

IT=100mA

7.3

20

mA

VGT

VD=12V, RL=10Ω

0.9

1.5

V

VTM

ITM=16A, tp=380µs

1.3

1.8

V

dv/dt

200

V/µs