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CPD80 датащи(PDF) 1 Page - Central Semiconductor Corp

номер детали CPD80
подробное описание детали  Switch Diode High Voltage Switching Diode Chip
PDF  2 Pages
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производитель  CENTRAL [Central Semiconductor Corp]
домашняя страница  http://www.centralsemi.com
Logo CENTRAL - Central Semiconductor Corp

CPD80 датащи(HTML) 1 Page - Central Semiconductor Corp

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Central
Semiconductor Corp.
TM
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
PROCESS
CPD80
Switch Diode
High Voltage Switching Diode Chip
PRINCIPAL DEVICE TYPES
CMPD2003
CMPD2004
1N3070
CMDD2003
CMDD2004
GEOMETRY
PROCESS DETAILS
BACKSIDE CATHODE
R2 (22-October 2003)
Process
EPITAXIAL PLANAR
Die Size
16 x 16 MILS
Die Thickness
9.0 MILS
Anode Bonding Pad Area
6.5 x 6.5 MILS
Top Side Metalization
Al - 30,000Å
Back Side Metalization
Au - 18,000Å
GROSS DIE PER 4 INCH WAFER
45,050


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