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IPF024N10NF2S датащи(PDF) 4 Page - Infineon Technologies AG

номер детали IPF024N10NF2S
подробное описание детали  StrongIRFETTM 2 Power-Transistor
PDF  11 Pages
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производитель  INFINEON [Infineon Technologies AG]
домашняя страница  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

IPF024N10NF2S датащи(HTML) 4 Page - Infineon Technologies AG

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4
StrongIRFETTM2Power-Transistor
IPF024N10NF2S
Rev.2.0,2022-09-23
Final Data Sheet
3Electricalcharacteristics
atTj=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Values
Min.
Typ.
Max.
Parameter
Symbol
Unit Note/TestCondition
Drain-source breakdown voltage
V(BR)DSS
100
-
-
V
VGS=0V,ID=1mA
Gate threshold voltage
VGS(th)
2.2
3.0
3.8
V
VDS=VGS,ID=169µA
Zero gate voltage drain current
IDSS
-
-
0.1
10
1
100
µA
VDS=100V,VGS=0V,Tj=25°C
VDS=100V,VGS=0V,Tj=125°C
Gate-source leakage current
IGSS
-
10
100
nA
VGS=20V,VDS=0V
Drain-source on-state resistance
RDS(on)
-
-
2.1
2.5
2.4
3.0
m
Ω
VGS=10V,ID=100A
VGS=6V,ID=50A
Gate resistance
RG
-
1.8
-
Ω
-
Transconductance
1)
gfs
107
-
-
S
|VDS|
≥2|ID|RDS(on)max,ID=100A
Table5Dynamiccharacteristics
Values
Min.
Typ.
Max.
Parameter
Symbol
Unit Note/TestCondition
Input capacitance
Ciss
-
7300
-
pF
VGS=0V,VDS=50V,f=1MHz
Output capacitance
Coss
-
1100
-
pF
VGS=0V,VDS=50V,f=1MHz
Reverse transfer capacitance
Crss
-
49
-
pF
VGS=0V,VDS=50V,f=1MHz
Turn-on delay time
td(on)
-
20
-
ns
VDD=50V,VGS=10V,ID=100A,
RG,ext=1.6
Ω
Rise time
tr
-
65
-
ns
VDD=50V,VGS=10V,ID=100A,
RG,ext=1.6
Ω
Turn-off delay time
td(off)
-
47
-
ns
VDD=50V,VGS=10V,ID=100A,
RG,ext=1.6
Ω
Fall time
tf
-
26
-
ns
VDD=50V,VGS=10V,ID=100A,
RG,ext=1.6
Ω
Table6Gatechargecharacteristics2)
Values
Min.
Typ.
Max.
Parameter
Symbol
Unit Note/TestCondition
Gate to source charge
Qgs
-
34
-
nC
VDD=50V,ID=100A,VGS=0to10V
Gate charge at threshold
Qg(th)
-
22
-
nC
VDD=50V,ID=100A,VGS=0to10V
Gate to drain charge
Qgd
-
21
-
nC
VDD=50V,ID=100A,VGS=0to10V
Switching charge
Qsw
-
33
-
nC
VDD=50V,ID=100A,VGS=0to10V
Gate charge total
1)
Qg
-
103
154
nC
VDD=50V,ID=100A,VGS=0to10V
Gate plateau voltage
Vplateau
-
4.6
-
V
VDD=50V,ID=100A,VGS=0to10V
Gate charge total, sync. FET
Qg(sync)
-
89
-
nC
VDS=0.1V,VGS=0to10V
Output charge
Qoss
-
131
-
nC
VDS=50V,VGS=0V
1) Defined by design. Not subject to production test.
2) See
″Gate charge waveforms″ for parameter definition



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