MAXIMUM RATINGS: (TA=25°C)

SYMBOL

UNITS

Collector-Base Voltage

VCBO

350

V

Collector-Emitter Voltage

VCEO

350

V

Emitter-Base Voltage

VEBO

6.0

V

Collector Current

IC

500

mA

Power Dissipation

PD

350

mW

Operating and Storage

Junction Temperature

TJ, Tstg

-65 to +150

°C

Thermal Resistance

ΘJA

357

°C/W

ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)

TYP

SYMBOL

TEST CONDITIONS

MIN

CMPTA42E

CMPTA92E

MAX

UNITS

ICBO

VCB=200V

250

nA

IEBO

VBE=3.0V

100

nA

BVCBO

IC=100µA

350

590

500

V

BVCEO

IC=1.0mA

350

475

450

V

BVEBO

IE=100µA

6.0

8.7

9.6

V

VCE(SAT)

IC=50mA, IB=5.0mA

125

150

350

mV

VBE(SAT)

IC=20mA, IB=2.0mA

0.9

V

hFE

VCE=10V, IC=1.0mA

50

110

105

hFE

VCE=10V, IC=10mA

50

110

105

hFE

VCE=10V, IC=30mA

50

110

105

fT

VCE=20V, IC=10mA, f=100MHz

50

75

75

MHz

Cob

VCB=20V, IE=0, f=1.0MHz

6.0

pF

CMPTA42E NPN

CMPTA92E PNP

ENHANCED SPECIFICATION

SURFACE MOUNT

COMPLEMENTARY

HIGH VOLTAGE SILICON TRANSISTORS

SOT-23 CASE

Central

Semiconductor Corp.

TM

R2 (10-October 2003)

DESCRIPTION:

The Central Semiconductor CMPTA42E &

CMPTA92E types are Enhanced versions of the

CMPTA42 & CMPTA92 complementary surface

mount high voltage transistors.

MARKING CODES: CMPTA42E: C1DE

CMPTA92E: C2DE

FEATURED ENHANCED SPECIFICATIONS:

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