MAXIMUM RATINGS: (TA=25°C)

SYMBOL

UNITS

Collector-Base Voltage

VCBO

250

V

Collector-Emitter Voltage

VCEO

220

V

Emitter-Base Voltage

VEBO

6.0

V

Collector Current

IC

600

mA

Power Dissipation

PD

350

mW

Operating and Storage

Junction Temperature

TJ,Tstg

-65 to +150

°C

Thermal Resistance

ΘJA

357

°C/W

ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

ICBO

VCB=120V

50

nA

ICBO

VCB=120V, TA=100°C

50

μA

IEBO

VEB=4.0V

50

nA

BVCBO

IC=100μμA

250

V

BVCEO

IC=1.0mA

220

V

BVEBO

IE=10μA

6.0

V

VCE(SAT)

IC=10mA, IB=1.0mA

75

mV

VCE(SAT)

IC=50mA, IB=5.0mA

100

mV

VBE(SAT)

IC=10mA, IB=1.0mA

1.00

V

VBE(SAT)

IC=50mA, IB=5.0mA

1.00

V

♦

♦

♦

♦

♦

♦

CMPT5551E

ENHANCED SPECIFICATION

SURFACE MOUNT

NPN SILICON TRANSISTOR

SOT-23 CASE

Central

Semiconductor Corp.

TM

R0 (10-May 2006)

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMPT5551E

is an NPN Silicon Transistor, packaged in an

SOT-23 case, designed for general purpose

amplifier applications requiring high breakdown

voltage and small space saving packaging.

FEATURES:

• High Collector Breakdown Voltage 250V

• Low Leakage Current 50nA Max

• Low Saturation Voltage 100mV Max @ 50mA

• Complementary Device CMPT5401E

• SOT-23 Surface Mount Package

APPLICATIONS:

• General purpose switching and amplification

• Telephone applications

MARKING CODE: C555