TTC021

2

4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 �)

Characteristics

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current (DC)

Collector current (pulsed)

Base current

Collector power dissipation

Collector power dissipation

Junction temperature

Storage temperature

(Note 1)

(Note 1)

(Note 2)

(Note 3)

Symbol

VCBO

VCEX

VCEO

VEBO

IC

ICP

IB

PC

Tj

Tstg

Rating

180

160

120

7

3

6

0.3

1.0

2.5

150

-55 to 150

Unit

V

V

V

A

A

W

�

�

Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Ensure that the junction temperature does not exceed 150 �.

Note 2: Device mounted on a 25.4 mm × 25.4 mm × 1.6 mm FR-4 glass epoxy board (with a dissipating copper surface

of 645 mm2)

Note 3: Device mounted on a 40.0 mm × 40.0 mm × 0.8 mm ceramic board (with a dissipating copper surface of 1600

mm2)

5. Electrical Charcteristics

5.1. Static Charcteristics (Unless otherwise specified, Ta = 25 �)

Characteristics

Collector cut-off current

Emitter cut-off current

Collector-emitter breakdown voltage

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Symbol

ICBO

IEBO

V(BR)CEO

hFE(1)

hFE(2)

VCE(sat)(1)

VCE(sat)(2)

VBE(sat)

Test Condition

VCB = 180 V, IE = 0 A

VEB = 7 V, IC = 0 A

IC = 10 mA, IB = 0 A

VCE = 2 V, IC = 0.3 A

VCE = 2 V, IC = 1.0 A

IC = 0.3 A, IB = 30 mA

IC = 1.0 A, IB = 0.1 A

IC = 1.0 A, IB = 0.1 A

Min

�

�

120

120

80

�

�

�

Typ.

�

�

�

�

�

0.04

0.08

0.88

Max

100

100

�

240

�

0.08

0.15

1.10

Unit

nA

nA

V

�

V

V

2022-10-12

Rev.1.0

©2022

Toshiba Electronic Devices & Storage Corporation