TTC017 datasheet(1/7 Pages) TOSHIBA

номер детали	TTC017

подробное описание детали	Bipolar Transistors Silicon NPN Epitaxial Type

PDF	7 Pages

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производитель	TOSHIBA [Toshiba Semiconductor]

домашняя страница	http://www.semicon.toshiba.co.jp/eng

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TTC017

1

Bipolar Transistors Silicon NPN Epitaxial Type

TTC017

Start of commercial production

2015-03

1.

1. Applications

Applications

•

Power Amplifiers

•

Power Switching

2.

2. Features

Features

(1)

High DC current gain

: hFE = 180 to 450 (IC = 0.5 A)

(2)

Low collector saturation voltage : VCE(sat) = 0.5 V (max) (IC = 1 A)

(3)

High-speed switching

: tstg = 400 ns (typ.) (IC = 1 A)

3.

3. Packaging and Internal Circuit

Packaging and Internal Circuit

New PW-Mold

1. Base

2. Collector (Heatsink)

3. Emitter

2015-03-24

Rev.1.0

Аналогичный номер детали - TTC017

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Toshiba Semiconductor	TTC011B	272Kb / 6P	Bipolar Transistors Silicon NPN Epitaxial Type 2016-02-09 Rev.1.0
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Аналогичное описание - TTC017

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