MAXIMUM RATINGS: (TA=25°C)

SYMBOL

UNITS

Collector-Base Voltage

VCBO

120

V

Collector-Emitter Voltage

VCEO

120

V

Emitter-Base Voltage

VEBO

5.0

V

Continuous Collector Current

IC

50

mA

Power Dissipation

PD

350

mW

Operating and Storage

Junction Temperature

TJ,Tstg

-65 to +150

°C

ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

ICBO

VCB=100V

500

nA

IEBO

VEB=4.0V

500

nA

BVCBO

IC=50µA

120

V

BVCEO

IC=1.0mA

120

V

BVEBO

IE=50µA

5.0

V

VCE(SAT)

IC=10mA, IB=1.0mA

500

mV

hFE

VCE=6.0V, IC=2.0mA

180

820

fT

VCE=12V, IE=2.0mA, f=100MHz

140

MHz

CFMS4

SURFACE MOUNT

DUAL, COMMON BASE,

SILICON PNP TRANSISTORS

SOT-25 CASE

Central

Semiconductor Corp.

TM

R0 (20-July 2004)

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CFMS4

consists of two silicon PNP transistors in a

common base configuration, manufactured by the

epitaxial planar process and epoxy molded in a

space saving SOT-25 surface mount package.

This device has been designed for small signal

applications where a high breakdown voltage is

required.

MARKING CODE: CFMS4