DMTH6010LPD

Document number: DS38244 Rev. 3 - 2

3 of 9

www.diodes.com

November 2021

© Diodes Incorporated

DMTH6010LPD

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

BVDSS

60

—

—

V

VGS = 0V, ID = 1mA

Zero Gate Voltage Drain Current

IDSS

—

—

1

µA

VDS = 48V, VGS = 0V

Gate-Source Leakage

IGSS

—

—

±100

nA

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

VGS(TH)

1

—

3

V

VDS = VGS, ID = 250μA

Static Drain-Source On-Resistance

RDS(ON)

—

8.5

11

m

Ω

VGS = 10V, ID = 20A

—

10.9

16

VGS = 4.5V, ID = 20A

Diode Forward Voltage

VSD

—

0.9

1.2

V

VGS = 0V, IS = 20A

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

Ciss

—

2615

—

pF

VDS = 30V, VGS = 0V,

f = 1MHz

Output Capacitance

Coss

—

1415

—

pF

Reverse Transfer Capacitance

Crss

—

58

—

pF

Gate Resistance

Rg

—

0.67

—

Ω

VDS = 0V, VGS = 0V, f = 1MHz

Total Gate Charge (VGS = 4.5V)

Qg

—

20.3

—

nC

VDS = 30V, ID = 20A

Total Gate Charge (VGS = 10V)

Qg

—

40.2

—

nC

Gate-Source Charge

Qgs

—

5.9

—

nC

Gate-Drain Charge

Qgd

—

9.3

—

nC

Turn-On Delay Time

tD(ON)

—

5.7

—

ns

VDD = 30V, VGS = 10V,

ID = 20A, RG = 3Ω

Turn-On Rise Time

tR

—

8.8

—

ns

Turn-Off Delay Time

tD(OFF)

—

20.8

—

ns

Turn-Off Fall Time

tF

—

7.4

—

ns

Body Diode Reverse Recovery Time

tRR

—



34.5

—



ns

IF = 20A, di/dt = 100A/μs

Body Diode Reverse Recovery Charge

QRR

—



37.5

—



nC

Notes:

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.