APM9926AK datasheet(2/10 Pages) ANPEC

номер детали	APM9926AK

подробное описание детали	Dual N-Channel Enhancement Mode MOSFET

PDF	10 Pages

Scroll/Zoom	100%

производитель	ANPEC [Anpec Electronics Coropration]

домашняя страница	http://www.anpec.com.tw

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2 / 10 page

Rev. B.1 - Mar., 2005

www.anpec.com.tw

APM9926AK

Absolute Maximum Ratings (T

A = 25°C unless otherwise noted)

Electrical Characteristics (T

A = 25°C unless otherwise noted)

Symbol

Parameter

Rating

Unit

VDSS

Drain-Source Voltage

VGSS

Gate-Source Voltage

±10

ID*

Continuous Drain Current

IDM*

300

µs Pulsed Drain Current

VGS=4.5V

IS*

Diode Continuous Forward Current

1.7

Maximum Junction Temperature

150

TSTG

Storage Temperature Range

-55 to 150

°C

TA=25°C

PD*

Maximum Power Dissipation

TA=100°C

0.8

RθJA*

Thermal Resistance-Junction to Ambient

62.5

°C/W

Note:

*Surface Mounted on 1in

2 pad area, t

≤ 10sec.

APM9926AK

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Unit

Static Characteristics

BVDSS

Drain-Source Breakdown Voltage

VGS=0V, IDS=250

µA

VDS=16V, VGS=0V

IDSS

Zero Gate Voltage Drain Current

TJ=85°C

µA

VGS(th)

Gate Threshold Voltage

VDS=VGS, IDS=250

µA

0.5

0.7

1.5

IGSS

Gate Leakage Current

VGS=±10V, VDS=0V

±100

VGS=4.5V, IDS=6A

RDS(ON)

Drain-Source On-state Resistance

VGS=2.5V, IDS=5.2A

Ω

VSD

Diode Forward Voltage

ISD=1.7A, VGS=0V

0.7

1.3

Gate Charge Characteristics

Total Gate Charge

Qgs

Gate-Source Charge

3.6

Qgd

Gate-Drain Charge

VDS=10V, VGS=4.5V,

IDS=6A

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