APM4947K datasheet(2/10 Pages) ANPEC

номер детали	APM4947K

подробное описание детали	Dual P-Channel Enhancement Mode MOSFET

PDF	10 Pages

Scroll/Zoom	100%

производитель	ANPEC [Anpec Electronics Coropration]

домашняя страница	http://www.anpec.com.tw

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2 / 10 page

Rev. B.1 - Mar., 2005

www.anpec.com.tw

APM4947K

Absolute Maximum Ratings (T

A = 25°C unless otherwise noted)

Electrical Characteristics (T

A = 25°C unless otherwise noted)

Symbol

Parameter

Rating

Unit

VDSS

Drain-Source Voltage

-30

VGSS

Gate-Source Voltage

±20

ID*

Continuous Drain Current

-2.5

IDM*

Pulsed Drain Current

VGS=-10V

-10

IS*

Diode Continuous Forward Current

-1.7

Maximum Junction Temperature

150

TSTG

Storage Temperature Range

-55 to 150

°C

TA=25°C

PD*

Maximum Power Dissipation

TA=100°C

0.8

RθJA*

Thermal Resistance-Junction to Ambient

62.5

°C/W

Note:

*Surface Mounted on 1in

2 pad area, t ≤ 10sec.

APM4947K

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Unit

Static Characteristics

BVDSS

Drain-Source Breakdown Voltage

VGS=0V, IDS=-250

µA

-30

VDS=-24V, VGS=0V

-1

IDSS

Zero Gate Voltage Drain Current

TJ=85°C

-30

µA

VGS(th)

Gate Threshold Voltage

VDS=VGS, IDS=-250

µA

-1

-1.5

-2

IGSS

Gate Leakage Current

VGS=±20V, VDS=0V

±100

VGS=-10V, IDS=-2.5A

120

RDS(ON)

Drain-Source On-state Resistance

VGS=-4.5V, IDS=-2A

145

185

Ω

VSD

Diode Forward Voltage

ISD=-1.7A, VGS=0V

-0.8

-1.3

Gate Charge Characteristics

Total Gate Charge

Qgs

Gate-Source Charge

1.8

Qgd

Gate-Drain Charge

VDS=-15V, VGS=-10V,

IDS=-2.5A

1.4

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