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APM3095PU датащи(PDF) 2 Page - Anpec Electronics Coropration

номер детали APM3095PU
подробное описание детали  P-Channel Enhancement Mode MOSFET
PDF  10 Pages
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производитель  ANPEC [Anpec Electronics Coropration]
домашняя страница  http://www.anpec.com.tw
Logo ANPEC - Anpec Electronics Coropration

APM3095PU датащи(HTML) 2 Page - Anpec Electronics Coropration

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Copyright
© ANPEC Electronics Corp.
Rev. B.2 - Oct., 2005
www.anpec.com.tw
2
APM3095PU
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings (TA = 25°C)
VDSS
Drain-Source Voltage
-30
VGSS
Gate-Source Voltage
±25
V
TJ
Maximum Junction Temperature
150
°C
TSTG
Storage Temperature Range
-55 to 150
°C
IS
Diode Continuous Forward Current
-2.5
A
Mounted on Large Heat Sink
TC=25°C
-20
IDP
300µs Pulse Drain Current Tested
TC=100°C
-10
A
TC=25°C
-8
ID
Continuous Drain Current
TC=100°C
-4
A
TC=25°C
50
PD
Maximum Power Dissipation
TC=100°C
20
W
RθJC
Thermal Resistance-Junction to Case
2.5
°C/W
Mounted on PCB of 1in
2 Pad Area
TA=25°C
-20
IDP
300µs Pulse Drain Current Tested
TA=100°C
-10
A
TA=25°C
-4
ID
Continuous Drain Current
TA=100°C
-2
A
TA=25°C
2.5
PD
Maximum Power Dissipation
TA=100°C
1
W
RθJA
Thermal Resistance-Junction to Ambient
50
°C/W
Mounted on PCB of Minimum Footprint
TA=25°C
-20
IDP
300µs Pulse Drain Current Tested
TA=100°C
-10
A
TA=25°C
-3
ID
Continuous Drain Current
TA=100°C
-2
A
TA=25°C
1.6
PD
Maximum Power Dissipation
TA=100°C
0.6
W
RθJA
Thermal Resistance-Junction to Ambient
75
°C/W



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