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APM3011NU датащи(PDF) 2 Page - Anpec Electronics Coropration

номер детали APM3011NU
подробное описание детали  N-Channel Enhancement Mode MOSFET
PDF  11 Pages
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производитель  ANPEC [Anpec Electronics Coropration]
домашняя страница  http://www.anpec.com.tw
Logo ANPEC - Anpec Electronics Coropration

APM3011NU датащи(HTML) 2 Page - Anpec Electronics Coropration

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Copyright  ANPEC Electronics Corp.
Rev. B.2 - Mar., 2005
www.anpec.com.tw
2
APM3011NU
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings
(TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
30
VGSS
Gate-Source Voltage
±20
V
TJ
Maximum Junction Temperature
150
°C
TSTG
Storage Temperature Range
-55 to 150
°C
Mounted on Large Heat Sink
TC=25°C
100
IDP
300
µs Pulse Drain Current Tested
TC=100°C
65
A
TC=25°C
40
ID
Continuous Drain Current
TC=100°C
22
A
TC=25°C
50
PD
Maximum Power Dissipation
TC=100°C
20
W
RθJC
Thermal Resistance-Junction to Case
2.5
°C/W
Mounted on PCB of 1in
2 pad area
TA=25°C
100
IDP
300
µs Pulse Drain Current Tested
TA=100°C
65
A
TA=25°C
10
ID
Continuous Drain Current
TA=100°C
6
A
TA=25°C
2.5
PD
Maximum Power Dissipation
TA=100°C
1
W
RθJA
Thermal Resistance-Junction to Ambient
50
°C/W
Mounted on PCB of Minimum Footprint
TA=25°C
100
IDP
300
µs Pulse Drain Current Tested
TA=100°C
65
A
TA=25°C
7
ID
Continuous Drain Current
TA=100°C
4
A
TA=25°C
1.5
PD
Maximum Power Dissipation
TA=100°C
0.5
W
RθJA
Thermal Resistance-Junction to Ambient
75
°C/W



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